Part Details for IRFE110 by International Rectifier
Overview of IRFE110 by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFE110
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 3.5A I(D), 100V, 0.69OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1 |
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$355.1296 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 3 |
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$125.0000 / $192.3100 | Buy Now |
Part Details for IRFE110
IRFE110 CAD Models
IRFE110 Part Data Attributes:
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IRFE110
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFE110
International Rectifier
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
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Pbfree Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
Part Package Code | LCC | |
Package Description | CHIP CARRIER, R-CQCC-N15 | |
Pin Count | 18 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 7 mJ | |
Case Connection | SOURCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 3.5 A | |
Drain-source On Resistance-Max | 0.69 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-CQCC-N15 | |
Number of Elements | 1 | |
Number of Terminals | 15 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 14 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | QUAD | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFE110
This table gives cross-reference parts and alternative options found for IRFE110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFE110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFE110-JQR-BE4 | 3.1A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 | TT Electronics Power and Hybrid / Semelab Limited | IRFE110 vs IRFE110-JQR-BE4 |
IRFE110-QR-JQR-BE4 | 3.1A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 | TT Electronics Power and Hybrid / Semelab Limited | IRFE110 vs IRFE110-QR-JQR-BE4 |
IRFE110 | 3.5A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18 | TT Electronics Power and Hybrid / Semelab Limited | IRFE110 vs IRFE110 |
IRFE110E4 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | TT Electronics Resistors | IRFE110 vs IRFE110E4 |
IRFE110-QR-JQR-B | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | TT Electronics Resistors | IRFE110 vs IRFE110-QR-JQR-B |
IRFE110 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | IRFE110 vs IRFE110 |
IRFE110-QR-JQR-BE4 | Power Field-Effect Transistor, 3.1A I(D), 100V, 0.69ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | IRFE110 vs IRFE110-QR-JQR-BE4 |
IRFE110E4 | 3.5A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18 | TT Electronics Power and Hybrid / Semelab Limited | IRFE110 vs IRFE110E4 |
IRFE110 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | TT Electronics Resistors | IRFE110 vs IRFE110 |
JANTXV2N6782U | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 | Microsemi Corporation | IRFE110 vs JANTXV2N6782U |