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Transistors Power Field-Effect Transistors IRFE110

IRFE110
Description: Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

Overview of IRFE110 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFE110 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
Future Electronics IRF Series 100 V 3.5 A 18-Pin LLCC Surface Mount Transistor RoHS: Non Compliant pbFree: No Min Qty: 1 Package Multiple: 1 Container: Bulk 0
Bulk
  • 1 $56.3100
$56.3100 Buy Now

CAD Models for IRFE110 by Infineon Technologies AG
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Part Data Attributes for IRFE110 by Infineon Technologies AG
Parametric Data

IRFE110
Infineon Technologies AG
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
CHIP CARRIER, R-CQCC-N15
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
7 mJ
Case Connection
SOURCE
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
3.5 A
Drain-source On Resistance-Max
0.69 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-CQCC-N15
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
15
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
11 W
Pulsed Drain Current-Max (IDM)
14 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
NO LEAD
Terminal Position
QUAD
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFE110
    Infineon Technologies AG
    Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
    VS

Alternate Parts for IRFE110

This table gives cross-reference parts and alternative options found for IRFE110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFE110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFE110 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 International Rectifier IRFE110 vs IRFE110
IRFE110-QR-JQR-BE4 Power Field-Effect Transistor, 3.1A I(D), 100V, 0.69ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE110 vs IRFE110-QR-JQR-BE4
IRFE110-QR-JQR-B 3.5A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18 TT Electronics Power and Hybrid / Semelab Limited IRFE110 vs IRFE110-QR-JQR-B
JANTX2N6782U Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 Microsemi Corporation IRFE110 vs JANTX2N6782U
IRFE110-JQR-BE4 Power Field-Effect Transistor, 3.1A I(D), 100V, 0.69ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE110 vs IRFE110-JQR-BE4
IRFE110-QR-JQR-B Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 TT Electronics Resistors IRFE110 vs IRFE110-QR-JQR-B
IRFE110 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 TT Electronics Resistors IRFE110 vs IRFE110
IRFE110-QR-JQR-BE4 3.1A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE110 vs IRFE110-QR-JQR-BE4
IRFE110-JQR-BE4 3.1A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE110 vs IRFE110-JQR-BE4
IRFE110-JQR-B Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 TT Electronics Resistors IRFE110 vs IRFE110-JQR-B
Part Number Description Manufacturer Compare
JANTXV2N6782U Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Defense Logistics Agency IRFE110 vs JANTXV2N6782U
JANTX2N6782U Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 International Rectifier IRFE110 vs JANTX2N6782U
JAN2N6782U Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 Microsemi Corporation IRFE110 vs JAN2N6782U
2N6782U Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 Microsemi Corporation IRFE110 vs 2N6782U
JANTXV2N6782U Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 International Rectifier IRFE110 vs JANTXV2N6782U
IRFE110E4 3.5A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18 TT Electronics Power and Hybrid / Semelab Limited IRFE110 vs IRFE110E4
IRFE110-JQR-BE4 3.1A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE110 vs IRFE110-JQR-BE4
IRFE110-QR-JQR-BE4 3.1A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE110 vs IRFE110-QR-JQR-BE4
JANTXV2N6782U Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE110 vs JANTXV2N6782U
IRFE110PBF Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 International Rectifier IRFE110 vs IRFE110PBF

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