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Transistors / Small Signal Field-Effect Transistors / IRFDC20PBF
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IRFDC20PBF by:

Small Signal Field-Effect Transistor, 0.32A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IRFDC20PBF by Vishay Intertechnologies

Overview of IRFDC20PBF by Vishay Intertechnologies

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Price & Stock for IRFDC20PBF

Part # Distributor Description Stock Price Buy
DISTI # 19K8148
Newark N Channel Mosfet, 600V, 320Ma, Hd-1, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:320Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFDC20PBF Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Bulk 0
Buy Now
DISTI # IRFDC20PBF
Avnet Americas Trans MOSFET N-CH 600V 0.32A 4-Pin HVMDIP - Bulk (Alt: IRFDC20PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Container: Bulk 0
  • 2,500 $1.2519
  • 5,000 $1.2118
  • 10,000 $1.1717
  • 15,000 $1.1242
  • 20,000 $1.0877
  • 25,000 $1.0366
  • 250,000 $0.9855
$0.9855 / $1.2519 Buy Now
DISTI # 844-IRFDC20PBF
Mouser Electronics MOSFET 600V N-CH HEXFET HEXDI RoHS: Compliant 2513
  • 1 $1.8100
  • 10 $1.5600
  • 100 $1.3300
  • 250 $1.2900
  • 500 $1.1900
  • 1,000 $0.9810
  • 2,500 $0.9800
  • 5,000 $0.9430
$0.9430 / $1.8100 Buy Now
DISTI # 70078902
RS MOSFET, Power, N-Ch, VDSS 600V, RDS(ON) 4.4 Ohms, ID 0.32A, HD-1,PD 1W, VGS+/-20V,-55C | Vishay PCS IRFDC20PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 2500
  • 1 $1.7500
  • 10 $1.6600
  • 50 $1.5800
  • 100 $1.4900
$1.4900 / $1.7500 Buy Now
Future Electronics Single N-Channel 600 V 4.4 Ohms Through Hole Power Mosfet - HVMDIP RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Tube 0
Tube
  • 2,500 $0.9300
$0.9300 Buy Now
DISTI # IRFDC20PBF
TTI MOSFET 600V N-CH HEXFET HEXDI RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 50 Container: Tube Americas - 0
  • 2,500 $0.9500
  • 5,000 $0.9300
  • 10,000 $0.9100
$0.9100 / $0.9500 Buy Now
DISTI # IRFDC20PBF
Avnet Americas Trans MOSFET N-CH 600V 0.32A 4-Pin HVMDIP - Bulk (Alt: IRFDC20PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Container: Bulk 0
  • 2,500 $1.2519
  • 5,000 $1.2118
  • 10,000 $1.1717
  • 15,000 $1.1242
  • 20,000 $1.0877
  • 25,000 $1.0366
  • 250,000 $0.9855
$0.9855 / $1.2519 Buy Now
DISTI # IRFDC20PBF
TME Transistor: N-MOSFET, unipolar, 600V, 320mA, Idm: 2.6A, 1W, HVMDIP Min Qty: 1 0
  • 1 $0.8250
  • 5 $0.7420
  • 25 $0.6560
  • 100 $0.5890
  • 500 $0.5500
  • 2,500 $0.5340
$0.5340 / $0.8250 RFQ
DISTI # IRFDC20PBF
EBV Elektronik Trans MOSFET N-CH 600V 0.32A 4-Pin HVMDIP (Alt: IRFDC20PBF) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRFDC20PBF

IRFDC20PBF CAD Models

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IRFDC20PBF Part Data Attributes:

Parametric Data
IRFDC20PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFDC20PBF Vishay Intertechnologies Small Signal Field-Effect Transistor, 0.32A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 0.32 A
Drain-source On Resistance-Max 4.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for IRFDC20PBF

This table gives cross-reference parts and alternative options found for IRFDC20PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFDC20PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFDC20 Small Signal Field-Effect Transistor, 0.32A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRFDC20PBF vs IRFDC20
IRFDC20PBF Small Signal Field-Effect Transistor, 0.32A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HVMDIP-4 Vishay Siliconix IRFDC20PBF vs IRFDC20PBF

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