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Power Field-Effect Transistor, 0.7A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFD9110PBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
9103236
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Farnell | MOSFET, P, DIL RoHS: Compliant Min Qty: 1 Lead time: 15 Weeks, 0 Days Container: Each | 1664 |
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$0.8505 / $1.7088 | Buy Now |
DISTI #
70078899
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RS | MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 1.2 Ohms, ID -0.7A, HD-1,PD 1.3W, VGS +/-20V | Vishay PCS I... more RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk | 0 |
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$1.7300 | RFQ |
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Bristol Electronics | 2386 |
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RFQ | ||
DISTI #
IRFD9110PBF
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TTI | MOSFETs HVMDIP 100V .7A P-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 1950 In Stock |
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$0.8500 | Buy Now |
DISTI #
IRFD9110PBF
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TME | Transistor: P-MOSFET, unipolar, -100V, -0.49A, 1.3W, DIP4 Min Qty: 1 | 185 |
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$0.4770 / $1.5700 | Buy Now |
DISTI #
IRFD9110PBF
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EBV Elektronik | MOSFET PCHANNEL 100V (Alt: IRFD9110PBF) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 143 Weeks, 0 Days | EBV - 100 |
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Buy Now | |
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Vyrian | Transistors | 1238 |
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RFQ |
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IRFD9110PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFD9110PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 0.7A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 140 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 0.7 A | |
Drain-source On Resistance-Max | 1.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 1.3 W | |
Power Dissipation-Max (Abs) | 1.3 W | |
Pulsed Drain Current-Max (IDM) | 5.6 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFD9110PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD9110PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRFD9110 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 0.7A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HVMDIP-4 | IRFD9110PBF vs IRFD9110 |
VP1008B-1 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 0.79A I(D), 100V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD | IRFD9110PBF vs VP1008B-1 |
VP1008B | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 0.79A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN | IRFD9110PBF vs VP1008B |
IRFD9110 | International Rectifier | Check for Price | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4 | IRFD9110PBF vs IRFD9110 |
VP1008B | Temic Semiconductors | Check for Price | Power Field-Effect Transistor, 0.79A I(D), 100V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, | IRFD9110PBF vs VP1008B |