Datasheets
IRFD9110PBF by:
Vishay Intertechnologies
International Rectifier
Vishay Huntington
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 0.7A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IRFD9110PBF by Vishay Intertechnologies

Results Overview of IRFD9110PBF by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRFD9110PBF Information

IRFD9110PBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFD9110PBF

Part # Distributor Description Stock Price Buy
DISTI # 9103236
Farnell MOSFET, P, DIL RoHS: Compliant Min Qty: 1 Lead time: 15 Weeks, 0 Days Container: Each 1664
  • 1 $1.7088
  • 10 $1.1599
  • 100 $0.9839
  • 500 $0.8673
  • 1,000 $0.8505
$0.8505 / $1.7088 Buy Now
DISTI # 70078899
RS MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 1.2 Ohms, ID -0.7A, HD-1,PD 1.3W, VGS +/-20V | Vishay PCS I... RFD9110PBF more RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk 0
  • 2,500 $1.7300
$1.7300 RFQ
Bristol Electronics   2386
RFQ
DISTI # IRFD9110PBF
TTI MOSFETs HVMDIP 100V .7A P-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 1950
In Stock
  • 50 $0.8500
$0.8500 Buy Now
DISTI # IRFD9110PBF
TME Transistor: P-MOSFET, unipolar, -100V, -0.49A, 1.3W, DIP4 Min Qty: 1 185
  • 1 $1.5700
  • 10 $0.7550
  • 100 $0.6070
  • 200 $0.5660
  • 500 $0.5150
  • 1,000 $0.4770
$0.4770 / $1.5700 Buy Now
DISTI # IRFD9110PBF
EBV Elektronik MOSFET PCHANNEL 100V (Alt: IRFD9110PBF) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 143 Weeks, 0 Days EBV - 100
Buy Now
Vyrian Transistors 1238
RFQ

Part Details for IRFD9110PBF

IRFD9110PBF CAD Models

IRFD9110PBF Part Data Attributes

IRFD9110PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFD9110PBF Vishay Intertechnologies Power Field-Effect Transistor, 0.7A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 140 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.7 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 1.3 W
Power Dissipation-Max (Abs) 1.3 W
Pulsed Drain Current-Max (IDM) 5.6 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFD9110PBF

This table gives cross-reference parts and alternative options found for IRFD9110PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD9110PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFD9110 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 0.7A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HVMDIP-4 IRFD9110PBF vs IRFD9110
VP1008B-1 Vishay Siliconix Check for Price Power Field-Effect Transistor, 0.79A I(D), 100V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD IRFD9110PBF vs VP1008B-1
VP1008B Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 0.79A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN IRFD9110PBF vs VP1008B
IRFD9110 International Rectifier Check for Price Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4 IRFD9110PBF vs IRFD9110
VP1008B Temic Semiconductors Check for Price Power Field-Effect Transistor, 0.79A I(D), 100V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, IRFD9110PBF vs VP1008B

IRFD9110PBF Related Parts

IRFD9110PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFD9110PBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow. Additionally, operate the device within its specified voltage and current ratings.

  • The recommended gate drive voltage for the IRFD9110PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRFD9110PBF is suitable for switching applications due to its low RDS(on) and high switching speed. However, ensure that the device is operated within its specified voltage and current ratings, and follow proper switching frequency and duty cycle guidelines.

  • Handle the IRFD9110PBF with ESD-protective equipment, such as wrist straps and mats, and ensure that the device is stored in an ESD-protective package. Additionally, follow proper PCB design and layout guidelines to minimize ESD susceptibility.