Datasheets
IRFD9010PBF by:

TRANSISTOR 1100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, HVMDIP, 4 PIN, FET General Purpose Small Signal

Part Details for IRFD9010PBF by Vishay Siliconix

Overview of IRFD9010PBF by Vishay Siliconix

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Applications Industrial Automation

Price & Stock for IRFD9010PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFD9010PBF-ND
DigiKey MOSFET P-CH 50V 1.1A 4DIP Min Qty: 1 Lead time: 14 Weeks Container: Tube 2797
In Stock
  • 1 $1.3300
  • 10 $1.0910
  • 100 $0.8484
  • 500 $0.7191
  • 1,000 $0.5858
  • 2,000 $0.5515
$0.5515 / $1.3300 Buy Now
DISTI # 70459447
RS MOSFET P-CH 50V 1.1A 4-DIP | Siliconix / Vishay IRFD9010PBF RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk 0
  • 2,500 $0.9300
  • 25,000 $0.8800
  • 125,000 $0.8300
  • 250,000 $0.7900
$0.7900 / $0.9300 RFQ
New Advantage Corporation Single P-Channel 50 V 0.5 Ohms Through Hole Power Mosfet - DIP-4 RoHS: Compliant Min Qty: 1 Package Multiple: 100 1400
  • 300 $0.6929
  • 1,400 $0.6467
$0.6467 / $0.6929 Buy Now

Part Details for IRFD9010PBF

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IRFD9010PBF Part Data Attributes

IRFD9010PBF Vishay Siliconix
Buy Now Datasheet
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IRFD9010PBF Vishay Siliconix TRANSISTOR 1100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, HVMDIP, 4 PIN, FET General Purpose Small Signal
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Package Description IN-LINE, R-PDIP-T4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 1.1 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFD9010PBF

This table gives cross-reference parts and alternative options found for IRFD9010PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD9010PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFD9010PBF Small Signal Field-Effect Transistor, 1.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Vishay Intertechnologies IRFD9010PBF vs IRFD9010PBF
Part Number Description Manufacturer Compare
IRFD9010 Small Signal Field-Effect Transistor, 1.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HVMDIP-4 Vishay Intertechnologies IRFD9010PBF vs IRFD9010

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