Datasheets
IRFD9010PBF by:

TRANSISTOR 1100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, HVMDIP, 4 PIN, FET General Purpose Small Signal

Part Details for IRFD9010PBF by Vishay Siliconix

Overview of IRFD9010PBF by Vishay Siliconix

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Applications Industrial Automation

Price & Stock for IRFD9010PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFD9010PBF-ND
DigiKey MOSFET P-CH 50V 1.1A 4DIP Min Qty: 1 Lead time: 14 Weeks Container: Tube 168
In Stock
  • 1 $1.9300
  • 10 $1.2300
  • 100 $0.8293
$0.8293 / $1.9300 Buy Now
DISTI # 70459447
RS MOSFET P-CH 50V 1.1A 4-DIP | Siliconix / Vishay IRFD9010PBF RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk 0
  • 2,500 $0.9300
  • 25,000 $0.8800
  • 125,000 $0.8300
  • 250,000 $0.7900
$0.7900 / $0.9300 RFQ
New Advantage Corporation Single P-Channel 50 V 0.5 Ohms Through Hole Power Mosfet - DIP-4 RoHS: Compliant Min Qty: 1 Package Multiple: 100 1500
  • 100 $0.6257
$0.6257 Buy Now

Part Details for IRFD9010PBF

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IRFD9010PBF Part Data Attributes

IRFD9010PBF Vishay Siliconix
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IRFD9010PBF Vishay Siliconix TRANSISTOR 1100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, HVMDIP, 4 PIN, FET General Purpose Small Signal
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer VISHAY SILICONIX
Package Description IN-LINE, R-PDIP-T4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 1.1 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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