Part Details for IRFD9010PBF by Vishay Siliconix
Overview of IRFD9010PBF by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Price & Stock for IRFD9010PBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFD9010PBF-ND
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DigiKey | MOSFET P-CH 50V 1.1A 4DIP Min Qty: 1 Lead time: 14 Weeks Container: Tube |
168 In Stock |
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$0.8293 / $1.9300 | Buy Now |
DISTI #
70459447
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RS | MOSFET P-CH 50V 1.1A 4-DIP | Siliconix / Vishay IRFD9010PBF RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk | 0 |
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$0.7900 / $0.9300 | RFQ |
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New Advantage Corporation | Single P-Channel 50 V 0.5 Ohms Through Hole Power Mosfet - DIP-4 RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 1500 |
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$0.6257 | Buy Now |
Part Details for IRFD9010PBF
IRFD9010PBF CAD Models
IRFD9010PBF Part Data Attributes
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IRFD9010PBF
Vishay Siliconix
Buy Now
Datasheet
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IRFD9010PBF
Vishay Siliconix
TRANSISTOR 1100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, HVMDIP, 4 PIN, FET General Purpose Small Signal
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | IN-LINE, R-PDIP-T4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 1.1 A | |
Drain-source On Resistance-Max | 0.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |