Datasheets
IRFD220PBF by:

Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IRFD220PBF by Vishay Intertechnologies

Overview of IRFD220PBF by Vishay Intertechnologies

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Automotive Motor control systems

Price & Stock for IRFD220PBF

Part # Distributor Description Stock Price Buy
DISTI # 97K1987
Newark Mosfet Transistor, N Channel, 1.3 A, 200 V, 800 Mohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRFD220PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $0.9880
  • 10 $0.7040
  • 25 $0.6250
  • 50 $0.5490
  • 100 $0.4650
  • 500 $0.3940
  • 1,000 $0.3470
  • 2,500 $0.3170
$0.3170 / $0.9880 Buy Now
DISTI # IRFD220PBF
Avnet Americas Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP - Bulk (Alt: IRFD220PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Bulk 208
  • 2,500 $0.6106
  • 2,600 $0.6020
  • 5,100 $0.5934
  • 13,000 $0.5848
  • 25,000 $0.5719
  • 130,000 $0.5633
  • 250,000 $0.5547
$0.5547 / $0.6106 Buy Now
DISTI # IRFD220PBF
Avnet Americas Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP - Bulk (Alt: IRFD220PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Bulk 0
  • 2,500 $0.7375
  • 5,000 $0.7138
  • 10,000 $0.6902
  • 15,000 $0.6622
  • 20,000 $0.6407
  • 25,000 $0.6106
  • 250,000 $0.5805
$0.5805 / $0.7375 Buy Now
DISTI # 19K8156
Avnet Americas Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP - Bulk (Alt: 19K8156) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 1 Days Container: Bulk 96 Partner Stock
  • 1 $0.8050
$0.8050 Buy Now
DISTI # 70078895
RS Power MOSFET, N-Ch, VDSS 200V, RDS(ON) 0.8Ohm, ID 0.8A, HD-1,PD 1W, VGS+/-20V, gFS 0.6S | Vishay PCS IRFD220PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $1.3900
  • 10 $1.3200
  • 50 $1.2500
  • 100 $1.1800
$1.1800 / $1.3900 RFQ
Future Electronics Single N-Channel 200 V 0.8 Ohms Through Hole Power Mosfet - HVMDIP-4 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 4865
Tube
  • 1 $0.6250
  • 75 $0.6000
  • 250 $0.5800
  • 1,000 $0.5550
  • 3,000 $0.5100
$0.5100 / $0.6250 Buy Now
Bristol Electronics   9
RFQ
DISTI # IRFD220PBF
TTI MOSFET 200V N-CH HEXFET HEXDI RoHS: Compliant pbFree: Pb-Free Min Qty: 100 Package Multiple: 100 Container: Tube Americas - 5500
In Stock
  • 100 $0.6590
  • 500 $0.6200
  • 1,000 $0.5860
  • 2,500 $0.5640
  • 5,000 $0.5480
  • 10,000 $0.5380
$0.5380 / $0.6590 Buy Now
DISTI # IRFD220PBF
TME Transistor: N-MOSFET, unipolar, 200V, 0.5A, 1W, DIP4 Min Qty: 1 986
  • 1 $0.9150
  • 5 $0.5810
  • 25 $0.5130
  • 100 $0.4610
  • 500 $0.4310
$0.4310 / $0.9150 Buy Now
ComSIT USA POWER MOSFET Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Europe - 400
RFQ
DISTI # IRFD220PBF
EBV Elektronik Trans MOSFET N-CH 200V 0.8A 4-Pin HVMDIP (Alt: IRFD220PBF) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation Hexfet (IR) RoHS: Compliant Min Qty: 1 Package Multiple: 100 700
  • 100 $0.4720
$0.4720 Buy Now

Part Details for IRFD220PBF

IRFD220PBF CAD Models

IRFD220PBF Part Data Attributes:

IRFD220PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFD220PBF Vishay Intertechnologies Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks, 1 Day
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 0.8 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFD220PBF

This table gives cross-reference parts and alternative options found for IRFD220PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD220PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFD220 Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-250AA, HVMDIP-4 Vishay Intertechnologies IRFD220PBF vs IRFD220
Part Number Description Manufacturer Compare
IRFD220 Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-250AA, HVMDIP-4 Vishay Intertechnologies IRFD220PBF vs IRFD220

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