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TRANSISTOR 600 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, HVMDIP-4, FET General Purpose Small Signal
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFD210PBF-ND
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DigiKey | MOSFET N-CH 200V 600MA 4DIP Min Qty: 1 Lead time: 10 Weeks Container: Bulk |
13500 In Stock |
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$0.5000 / $0.9400 | Buy Now |
DISTI #
70459445
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RS | MOSFET N-CH 200V 600MA 4-DIP | Siliconix / Vishay IRFD210PBF RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk | 0 |
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$0.7900 / $0.9300 | RFQ |
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New Advantage Corporation | Single N-Channel 200 V 1.5 Ohms Through Hole Power Mosfet - HVMDIP-4 RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 1500 |
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$0.6600 / $0.7071 | Buy Now |
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IRFD210PBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRFD210PBF
Vishay Siliconix
TRANSISTOR 600 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, HVMDIP-4, FET General Purpose Small Signal
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | DIP | |
Package Description | IN-LINE, R-PDIP-T3 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 0.6 A | |
Drain-source On Resistance-Max | 1.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFD210PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD210PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SIHFD210-E3 | TRANSISTOR 600 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, HVMDIP-4, FET General Purpose Small Signal | Vishay Siliconix | IRFD210PBF vs SIHFD210-E3 |
IRFD210PBF | Small Signal Field-Effect Transistor, 0.6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Vishay Intertechnologies | IRFD210PBF vs IRFD210PBF |
IRFD210 | Small Signal Field-Effect Transistor, 0.6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Motorola Semiconductor Products | IRFD210PBF vs IRFD210 |