We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In
Transistors / Small Signal Field-Effect Transistors / IRFD210PBF
Datasheets
IRFD210PBF by:
Vishay Intertechnologies
International Rectifier
Vishay Intertechnologies
Vishay Siliconix
Not Found

Small Signal Field-Effect Transistor, 0.6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IRFD210PBF by Vishay Intertechnologies

Results Overview of IRFD210PBF by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRFD210PBF Information

IRFD210PBF by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFD210PBF

Part # Distributor Description Stock Price Buy
DISTI # 19K8155
Newark N Channel Mosfet, 200V, 600Ma, Hd-1, Channel Type:N Channel, Drain Source Voltage Vds:200V, Conti... nuous Drain Current Id:600Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFD210PBF more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 961
  • 1 $0.6300
  • 10 $0.5820
  • 25 $0.5820
  • 50 $0.5820
  • 100 $0.5820
  • 500 $0.5040
  • 1,000 $0.5000
$0.5000 / $0.6300 Buy Now
DISTI # IRFD210PBF
Avnet Americas MOSFET N-CHANNEL 200V - Bulk (Alt: IRFD210PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Bulk 5184
RFQ
DISTI # 70078894
RS MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 1.5 Ohms, ID 0.6A, HD-1,PD 1W, VGS+/-20V, VF 2V | Vishay PCS... IRFD210PBF more RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 135
  • 1 $1.9500
  • 5 $1.7900
  • 10 $1.7200
  • 100 $1.5600
  • 250 $1.4600
$1.4600 / $1.9500 Buy Now
Future Electronics Single N-Channel 200 V 1.5 Ohms Through Hole Power Mosfet - HVMDIP-4 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 1800
Tube
  • 1 $0.6150
  • 50 $0.6000
  • 200 $0.5850
  • 750 $0.5700
  • 2,500 $0.5400
$0.5400 / $0.6150 Buy Now
DISTI # 67613399
Verical Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP RoHS: Compliant Min Qty: 61 Package Multiple: 1 Date Code: 2206 Americas - 212
  • 61 $0.9020
$0.9020 Buy Now
Bristol Electronics   2300
RFQ
Quest Components SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 200V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR... FET more 1840
  • 1 $1.3500
  • 297 $0.5400
  • 1,482 $0.4725
$0.4725 / $1.3500 Buy Now
DISTI # IRFD210PBF
TME Transistor: N-MOSFET, unipolar, 200V, 0.38A, 1W, DIP4 Min Qty: 1 966
  • 1 $0.7180
  • 5 $0.4520
  • 25 $0.4080
  • 100 $0.3600
  • 500 $0.3230
$0.3230 / $0.7180 Buy Now
DISTI # IRFD210PBF
EBV Elektronik MOSFET NCHANNEL 200V (Alt: IRFD210PBF) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRFD210PBF

IRFD210PBF CAD Models

  • Part Symbol

    Part Symbol

  • Footprint

    footprint

  • 3D Model

    3D Model

Available Download Formats

Sign in to download CAD models Register or Sign In

By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy

IRFD210PBF Part Data Attributes

Parametric Data
IRFD210PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFD210PBF Vishay Intertechnologies Small Signal Field-Effect Transistor, 0.6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 0.6 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFD210PBF

This table gives cross-reference parts and alternative options found for IRFD210PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD210PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFD210 Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HEXDIP-4 IRFD210PBF vs IRFD210
Part Number Manufacturer Composite Price Description Compare
IRFD210 Motorola Semiconductor Products Check for Price Small Signal Field-Effect Transistor, 0.6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IRFD210PBF vs IRFD210
IRFD210PBF Vishay Siliconix Check for Price TRANSISTOR 600 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, HVMDIP-4, FET General Purpose Small Signal IRFD210PBF vs IRFD210PBF
IRFD210 Intersil Corporation Check for Price 600mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET IRFD210PBF vs IRFD210
IRFD210 Motorola Mobility LLC Check for Price 600mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET IRFD210PBF vs IRFD210
IRFD210 Vishay Intertechnologies Check for Price Small Signal Field-Effect Transistor, 0.6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4 IRFD210PBF vs IRFD210
IRFD210 International Rectifier Check for Price Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4 IRFD210PBF vs IRFD210

IRFD210PBF Related Parts

IRFD210PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFD210PBF is -55°C to 175°C.

  • To ensure reliability, follow proper PCB design and layout guidelines, use a suitable thermal management system, and ensure the device is operated within its specified ratings and conditions.

  • The recommended gate drive voltage for the IRFD210PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRFD210PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB design and layout to minimize parasitic inductance and capacitance.

  • Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure the device is stored in an ESD-protected package.