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Small Signal Field-Effect Transistor, 0.6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19K8155
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Newark | N Channel Mosfet, 200V, 600Ma, Hd-1, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:600Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFD210PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1184 |
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$0.5820 / $0.6870 | Buy Now |
DISTI #
IRFD210PBF
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Avnet Americas | Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP - Bulk (Alt: IRFD210PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 7184 |
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$0.4442 / $0.4706 | Buy Now |
DISTI #
IRFD210PBF
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Avnet Americas | Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP - Bulk (Alt: IRFD210PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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RFQ | |
DISTI #
19K8155
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Avnet Americas | Trans MOSFET N-CH 200V 0.6A 4-Pin HVMDIP - Bulk (Alt: 19K8155) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 1 Days Container: Bulk | 1184 Partner Stock |
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$0.8830 / $1.3300 | Buy Now |
DISTI #
70078894
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RS | MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 1.5 Ohms, ID 0.6A, HD-1,PD 1W, VGS+/-20V, VF 2V | Vishay PCS IRFD210PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 135 |
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$0.9500 / $1.2600 | Buy Now |
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Future Electronics | Single N-Channel 200 V 1.5 Ohms Through Hole Power Mosfet - HVMDIP-4 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 1900Tube |
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$0.5050 / $0.6200 | Buy Now |
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Bristol Electronics | 2300 |
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RFQ | ||
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 200V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1840 |
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$0.4725 / $1.3500 | Buy Now |
DISTI #
IRFD210PBF
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TTI | MOSFET 200V N-CH HEXFET HEXDI RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 1250 In Stock |
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$0.5100 / $0.6740 | Buy Now |
DISTI #
IRFD210PBF
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TME | Transistor: N-MOSFET, unipolar, 200V, 0.38A, 1W, DIP4 Min Qty: 1 | 342 |
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$0.3410 / $0.7580 | Buy Now |
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IRFD210PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFD210PBF
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 0.6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks, 1 Day | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 0.6 A | |
Drain-source On Resistance-Max | 1.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |