Part Details for IRFD210 by Harris Semiconductor
Overview of IRFD210 by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IRFD210
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRFD210-ND
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DigiKey | 0.6A 200V 1.500 OHM N-CHANNEL Min Qty: 329 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
1014 In Stock |
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$0.9100 | Buy Now |
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Rochester Electronics | IRFD210 - 0.6A, 200V, 1.500 OHM, N-Channel POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 1014 |
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$0.7833 / $0.9215 | Buy Now |
Part Details for IRFD210
IRFD210 CAD Models
IRFD210 Part Data Attributes:
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IRFD210
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
IRFD210
Harris Semiconductor
Small Signal Field-Effect Transistor, 0.6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 0.6 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |