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Transistors / Power Field-Effect Transistors / IRFD024
Datasheets
IRFD024 by:
International Rectifier
International Rectifier
Thomson Consumer Electronics
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4

Part Details for IRFD024 by International Rectifier

Results Overview of IRFD024 by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Industrial Automation Medical Imaging Motor control systems

IRFD024 Information

IRFD024 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFD024

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 1 2161
  • 1 $8.7750
  • 6 $6.5813
  • 17 $5.9231
  • 29 $5.4844
  • 74 $5.2650
  • 153 $5.0456
$5.0456 / $8.7750 Buy Now
Bristol Electronics   10
RFQ
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2.5A I(D),TO-250VAR 1120
  • 1 $11.7000
  • 286 $6.7275
  • 596 $6.1425
$6.1425 / $11.7000 Buy Now
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2.5A I(D),TO-250VAR 540
  • 1 $4.0000
  • 151 $1.8500
  • 325 $1.6500
$1.6500 / $4.0000 Buy Now
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2.5A I(D),TO-250VAR 514
  • 1 $4.5528
  • 83 $2.8076
  • 357 $2.5040
$2.5040 / $4.5528 Buy Now
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2.5A I(D),TO-250VAR 460
  • 1 $2.4000
  • 105 $1.2960
  • 232 $1.2000
$1.2000 / $2.4000 Buy Now
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2.5A I(D),TO-250VAR 96
  • 1 $3.8400
  • 32 $2.1120
  • 72 $1.9200
$1.9200 / $3.8400 Buy Now
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2.5A I(D),TO-250VAR 27
  • 1 $3.8400
  • 2 $2.8800
  • 10 $2.4000
$2.4000 / $3.8400 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Sil... icon, Metal-oxide Semiconductor FET more ECCN: EAR99 RoHS: Not Compliant Stock DE - 200
Stock ES - 2099
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRFD024

IRFD024 CAD Models

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IRFD024 Part Data Attributes

Parametric Data
IRFD024 International Rectifier
Buy Now Datasheet
Compare Parts:
IRFD024 International Rectifier Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code DIP
Package Description DIP-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 91 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1.3 W
Power Dissipation-Max (Abs) 1.3 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFD024

This table gives cross-reference parts and alternative options found for IRFD024. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD024, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFD024 Vishay Siliconix Check for Price Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HVMDIP-4 IRFD024 vs IRFD024
IRFD024 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4 IRFD024 vs IRFD024
IRFD024PBF International Rectifier Check for Price Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4 IRFD024 vs IRFD024PBF
IRFD024PBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HVMDIP-4 IRFD024 vs IRFD024PBF
IRFD024PBF Vishay Intertechnologies $0.7007 Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, DIP-4 IRFD024 vs IRFD024PBF

IRFD024 Related Parts

IRFD024 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IRFD024 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.

  • The junction-to-case thermal resistance (RθJC) for the IRFD024 can be calculated using the thermal resistance values provided in the datasheet. RθJC is typically calculated as the sum of the junction-to-lead (RθJL) and lead-to-case (RθLC) thermal resistances. For the IRFD024, RθJC is approximately 1.5°C/W.

  • The recommended gate drive voltage for the IRFD024 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.

  • Yes, the IRFD024 is suitable for high-frequency switching applications up to several hundred kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is designed to minimize ringing and oscillations.

  • To protect the IRFD024 from overvoltage and overcurrent conditions, it's recommended to use a combination of voltage clamping devices, such as zener diodes or transient voltage suppressors, and current sensing resistors or fuses. Additionally, implementing overcurrent protection circuits, such as latch-off or foldback current limiting, can help prevent damage to the device.