Part Details for IRFD024 by International Rectifier
Overview of IRFD024 by International Rectifier
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Medical Imaging
Motor control systems
Price & Stock for IRFD024
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 2161 |
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$5.0456 / $8.7750 | Buy Now |
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Bristol Electronics | 10 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-250VAR | 3572 |
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$1.4400 / $3.8400 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-250VAR | 1120 |
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$6.1425 / $11.7000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-250VAR | 514 |
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$2.5040 / $4.5528 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-250VAR | 460 |
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$1.2000 / $2.4000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-250VAR | 96 |
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$1.9200 / $3.8400 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-250VAR | 27 |
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$2.4000 / $3.8400 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-250VAR | 11 |
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$1.5000 / $2.5000 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant |
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RFQ |
Part Details for IRFD024
IRFD024 CAD Models
IRFD024 Part Data Attributes
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IRFD024
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFD024
International Rectifier
Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | DIP | |
| Package Description | DIP-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 91 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 1.3 W | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFD024
This table gives cross-reference parts and alternative options found for IRFD024. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD024, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFD024PBF | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, DIP-4 | Vishay Intertechnologies | IRFD024 vs IRFD024PBF |
| IRFD024 | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HVMDIP-4 | Vishay Siliconix | IRFD024 vs IRFD024 |
| IRFD024PBF | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HVMDIP-4 | Vishay Siliconix | IRFD024 vs IRFD024PBF |