-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
63J6702
|
Newark | N Channel Mosfet, 1Kv, 3.1A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:1Kv, Continuous Drain Current Id:3.1A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Vishay IRFBG30PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 694 |
|
$1.3700 / $1.6200 | Buy Now |
DISTI #
IRFBG30PBF
|
Avnet Americas | MOSFET N-CHANNEL 1000V - Bulk (Alt: IRFBG30PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Bulk | 26674 |
|
$1.1100 | Buy Now |
DISTI #
63J6702
|
Avnet Americas | MOSFET N-CHANNEL 1000V - Bulk (Alt: 63J6702) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Bulk | 694 Partner Stock |
|
$1.5900 / $2.3700 | Buy Now |
DISTI #
844-IRFBG30PBF
|
Mouser Electronics | MOSFETs TO220 1KV 3.1A N-CH MOSFET RoHS: Compliant | 4361 |
|
$1.1700 / $2.2500 | Buy Now |
DISTI #
E02:0323_00021365
|
Arrow Electronics | Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2436 | Europe - 13237 |
|
$0.7894 / $1.0306 | Buy Now |
DISTI #
V36:1790_09218694
|
Arrow Electronics | Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2352 | Americas - 3930 |
|
$0.9074 / $1.2409 | Buy Now |
DISTI #
70078890
|
RS | MOSFET, Power, N-Ch, VDSS 1000V, RDS(ON) 5 Ohms, ID 3.1A, TO-220AB, PD 125W, VGS +/-20V | Vishay PCS IRFBG30PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 780 |
|
$1.7300 / $2.3000 | Buy Now |
|
Future Electronics | Single N-Channel 1000 V 5 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 5895Tube |
|
$0.9050 / $1.1200 | Buy Now |
|
Future Electronics | Single N-Channel 1000 V 5 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 1200Tube |
|
$0.9050 / $1.1200 | Buy Now |
DISTI #
84875084
|
Verical | Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 12 Package Multiple: 1 Date Code: 2436 | Americas - 13236 |
|
$0.8097 / $1.0572 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRFBG30PBF
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
IRFBG30PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-220AB | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks, 3 Days | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 280 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 3.1 A | |
Drain-source On Resistance-Max | 5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 50 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFBG30PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBG30PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRFBG30PBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | IRFBG30PBF vs IRFBG30PBF |