Part Details for IRFBE30STRLPBF by Vishay Siliconix
Overview of IRFBE30STRLPBF by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IRFBE30STRLPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFBE30STRLPBFCT-ND
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DigiKey | MOSFET N-CH 800V 4.1A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
800 In Stock |
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$1.6062 / $4.5200 | Buy Now |
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Bristol Electronics | 575 |
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RFQ |
Part Details for IRFBE30STRLPBF
IRFBE30STRLPBF CAD Models
IRFBE30STRLPBF Part Data Attributes
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IRFBE30STRLPBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRFBE30STRLPBF
Vishay Siliconix
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 260 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 4.1 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFBE30STRLPBF
This table gives cross-reference parts and alternative options found for IRFBE30STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBE30STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFBE30STRLPBF | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFBE30STRLPBF vs IRFBE30STRLPBF |