Datasheets
IRFBC40APBF by:

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

Part Details for IRFBC40APBF by Vishay Siliconix

Overview of IRFBC40APBF by Vishay Siliconix

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IRFBC40APBF

Part # Distributor Description Stock Price Buy
DISTI # IRFBC40APBF-ND
DigiKey MOSFET N-CH 600V 6.2A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Tube 998
In Stock
  • 1 $3.2100
  • 50 $1.6032
  • 100 $1.4474
  • 500 $1.1744
  • 1,000 $1.0867
  • 2,000 $1.0129
  • 5,000 $1.0037
$1.0037 / $3.2100 Buy Now
DISTI # 70459436
RS IRFBC40APBF N-channel MOSFET Transistor, 6.2 A, 600 V, 3-Pin TO-220AB | Siliconix / Vishay IRFBC40APBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 6
  • 1 $2.2100
  • 10 $2.1000
  • 50 $1.9900
  • 100 $1.8800
$1.8800 / $2.2100 Buy Now
Bristol Electronics   300
RFQ
Bristol Electronics   82
RFQ
Quest Components 6.2A, 600V, 1.2OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB 240
  • 1 $3.0000
  • 92 $1.5000
  • 201 $1.3875
$1.3875 / $3.0000 Buy Now
Quest Components 6.2A, 600V, 1.2OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB 104
  • 1 $1.8750
  • 15 $1.5000
  • 51 $1.1250
$1.1250 / $1.8750 Buy Now
New Advantage Corporation Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 50 750
  • 150 $1.1900
  • 750 $1.1100
$1.1100 / $1.1900 Buy Now

Part Details for IRFBC40APBF

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IRFBC40APBF Part Data Attributes

IRFBC40APBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRFBC40APBF Vishay Siliconix Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 570 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6.2 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 25 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFBC40APBF

This table gives cross-reference parts and alternative options found for IRFBC40APBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC40APBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFBC40A Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBC40APBF vs IRFBC40A
IRFBC40APBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFBC40APBF vs IRFBC40APBF
IRFBC40APBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Vishay Intertechnologies IRFBC40APBF vs IRFBC40APBF
Part Number Description Manufacturer Compare
IRFBC40APBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFBC40APBF vs IRFBC40APBF
IRFBC40A Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBC40APBF vs IRFBC40A
IRFBC40APBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Vishay Intertechnologies IRFBC40APBF vs IRFBC40APBF

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