Datasheets
IRFBA22N50A by:

Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, SUPER-220, 3 PIN

Part Details for IRFBA22N50A by International Rectifier

Overview of IRFBA22N50A by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRFBA22N50A

Part # Distributor Description Stock Price Buy
Component Electronics, Inc IN STOCK SHIP TODAY 3
  • 1 $11.5400
  • 100 $8.6500
  • 1,000 $7.5000
$7.5000 / $11.5400 Buy Now

Part Details for IRFBA22N50A

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IRFBA22N50A Part Data Attributes

IRFBA22N50A International Rectifier
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IRFBA22N50A International Rectifier Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, SUPER-220, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-273AA
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 24 A
Drain-source On Resistance-Max 0.23 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-273AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 357 W
Pulsed Drain Current-Max (IDM) 96 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFBA22N50A

This table gives cross-reference parts and alternative options found for IRFBA22N50A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBA22N50A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFBA22N50APBF Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, LEAD FREE, SUPER-220, 3 PIN International Rectifier IRFBA22N50A vs IRFBA22N50APBF
Part Number Description Manufacturer Compare
IRFP23N50LPBF Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN International Rectifier IRFBA22N50A vs IRFP23N50LPBF
IXTV26N50P Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN Littelfuse Inc IRFBA22N50A vs IXTV26N50P
IXFT26N50P Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation IRFBA22N50A vs IXFT26N50P
IXFT26N55Q Power Field-Effect Transistor, 26A I(D), 550V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, D3, 3 PIN Littelfuse Inc IRFBA22N50A vs IXFT26N55Q
IXFV26N50P Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN IXYS Corporation IRFBA22N50A vs IXFV26N50P
IXFH26N55Q Power Field-Effect Transistor, 26A I(D), 550V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 IXYS Corporation IRFBA22N50A vs IXFH26N55Q
IRFBA22N50APBF Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, LEAD FREE, SUPER-220, 3 PIN International Rectifier IRFBA22N50A vs IRFBA22N50APBF
IRFP23N50LPBF Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN Vishay Intertechnologies IRFBA22N50A vs IRFP23N50LPBF
APT24F50B Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc IRFBA22N50A vs APT24F50B
2SK1499 Power Field-Effect Transistor, 25A I(D), 450V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NEC Electronics Group IRFBA22N50A vs 2SK1499

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