Part Details for IRFB4510PBF by International Rectifier
Overview of IRFB4510PBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Financial Technology (Fintech)
Aerospace and Defense
Renewable Energy
Price & Stock for IRFB4510PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IRFB4510 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Active Min Qty: 1 | 100 |
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$0.5915 / $0.6959 | Buy Now |
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ComSIT USA | HEXFET Power MOSFET Power Field-Effect Transistor, 62A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | Europe - 50 |
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RFQ |
Part Details for IRFB4510PBF
IRFB4510PBF CAD Models
IRFB4510PBF Part Data Attributes
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IRFB4510PBF
International Rectifier
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Datasheet
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IRFB4510PBF
International Rectifier
Power Field-Effect Transistor, 62A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | LEAD FREE, PLASTIC PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 62 A | |
| Drain-source On Resistance-Max | 0.0135 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 250 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |