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Power Field-Effect Transistor, 60A I(D), 250V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, 3 PIN
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
61M6837
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Newark | Mosfet, N, 250V, To-220Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:250V, On Resistance Rds(On):0.033Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Power Dissipation Rohs Compliant: Yes |Infineon IRFB4332PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 721 |
|
$2.6100 / $3.8800 | Buy Now |
DISTI #
IRFB4332PBF-ND
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DigiKey | MOSFET N-CH 250V 60A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
3323 In Stock |
|
$1.9469 / $4.1700 | Buy Now |
DISTI #
IRFB4332PBF
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Avnet Americas | Trans MOSFET N-CH 250V 60A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4332PBF) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$1.7522 / $2.1415 | Buy Now |
DISTI #
942-IRFB4332PBF
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Mouser Electronics | MOSFET MOSFT 250V 60A 33mOhm 99nC Qg RoHS: Compliant | 21063 |
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$1.9400 / $3.0900 | Buy Now |
DISTI #
70017932
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RS | MOSFET, N Ch., 250V, 60A, 33 MOHM, 99 NC QG, TO-220AB, Pb-Free | Infineon IRFB4332PBF RoHS: Not Compliant Min Qty: 50 Package Multiple: 1 Container: Bulk | 0 |
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$3.6000 / $4.5000 | RFQ |
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Future Electronics | Single N-Channel 250 V 33 mOhm 99 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 129Tube |
|
$1.9100 / $2.1700 | Buy Now |
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Future Electronics | Single N-Channel 250 V 33 mOhm 99 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.9100 / $2.1000 | Buy Now |
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Quest Components | 60A, 250V, 0.033OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 800 |
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$3.7590 / $7.5180 | Buy Now |
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Rochester Electronics | IRFB4332 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 11186 |
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$1.9300 / $2.2700 | Buy Now |
DISTI #
IRFB4332PBF
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TME | Transistor: N-MOSFET, unipolar, 250V, 60A, 390W, TO220AB Min Qty: 1 | 47 |
|
$1.8700 / $3.0700 | Buy Now |
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IRFB4332PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFB4332PBF
Infineon Technologies AG
Power Field-Effect Transistor, 60A I(D), 250V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | LEAD FREE, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 60 A | |
Drain-source On Resistance-Max | 0.033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 390 W | |
Pulsed Drain Current-Max (IDM) | 230 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |