Part Details for IRFB4110PBF by International Rectifier
Results Overview of IRFB4110PBF by International Rectifier
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFB4110PBF Information
IRFB4110PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFB4110PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 120A I(D), 100V, 0.0045OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXID... more | 3865 |
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$1.8563 / $3.7125 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 120A I(D), 100V, 0.0045OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXID... more | 88 |
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$9.0835 / $14.7300 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 120A I(D), 100V, 0.0045OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXID... more | 84 |
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$9.3425 / $11.3625 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 7179 |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 56 |
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$7.5000 / $11.5400 | Buy Now |
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Vyrian | Transistors | 4170 |
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RFQ |
Part Details for IRFB4110PBF
IRFB4110PBF CAD Models
IRFB4110PBF Part Data Attributes
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IRFB4110PBF
International Rectifier
Buy Now
Datasheet
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IRFB4110PBF
International Rectifier
Power Field-Effect Transistor, 180A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | LEAD FREE, PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 190 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 370 W | |
| Pulsed Drain Current-Max (IDM) | 670 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFB4110PBF
This table gives cross-reference parts and alternative options found for IRFB4110PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB4110PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFB4110GPBF | Infineon Technologies AG | $1.5775 | Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 | IRFB4110PBF vs IRFB4110GPBF |
| IRFB4110PBF | Infineon Technologies AG | $1.8072 | Power Field-Effect Transistor, 180A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | IRFB4110PBF vs IRFB4110PBF |