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Part Details for IRFB4020PBF by Infineon Technologies AG
Overview of IRFB4020PBF by Infineon Technologies AG
- Distributor Offerings: (25 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Electronic Manufacturing
Automotive
Price & Stock for IRFB4020PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
61M6831
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Newark | Mosfet Transistor, N Channel, 18 A, 200 V, 100 Mohm, 10 V, 4.9 V Rohs Compliant: Yes |Infineon IRFB4020PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 871 |
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$0.7900 / $1.4200 | Buy Now |
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DISTI #
IRFB4020PBF-ND
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DigiKey | MOSFET N-CH 200V 18A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
17666 In Stock |
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$0.7495 / $1.2600 | Buy Now |
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DISTI #
IRFB4020PBF
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Avnet Americas | Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4020PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.6746 / $0.8245 | Buy Now |
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DISTI #
942-IRFB4020PBF
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Mouser Electronics | MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud RoHS: Compliant | 3051 |
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$0.7490 / $1.2600 | Buy Now |
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DISTI #
V99:2348_13889703
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Arrow Electronics | Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2233 | Americas - 262 |
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$0.6411 / $0.9039 | Buy Now |
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Future Electronics | Single N-Channel 200 V 100 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 0Tube |
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$0.6500 / $0.7550 | Buy Now |
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Future Electronics | Single N-Channel 200 V 100 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 0Tube |
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$0.6300 / $0.7300 | Buy Now |
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Future Electronics | Single N-Channel 200 V 100 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 0Tube |
|
$0.6300 / $0.7750 | Buy Now |
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Future Electronics | Single N-Channel 200 V 100 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 0Tube |
|
$0.6300 / $0.7450 | Buy Now |
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DISTI #
69837911
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Verical | Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 38 Package Multiple: 1 Date Code: 2245 | Americas - 3937 |
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$0.7975 / $0.8325 | Buy Now |
Part Details for IRFB4020PBF
IRFB4020PBF CAD Models
IRFB4020PBF Part Data Attributes
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IRFB4020PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFB4020PBF
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 94 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 100 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFB4020PBF
This table gives cross-reference parts and alternative options found for IRFB4020PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB4020PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFB17N20D | Power Field-Effect Transistor, 16A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | International Rectifier | IRFB4020PBF vs IRFB17N20D |
| IRFB17N20DPBF | Power Field-Effect Transistor, 16A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFB4020PBF vs IRFB17N20DPBF |
| IRFB4620PBF | Power Field-Effect Transistor, 25A I(D), 200V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRFB4020PBF vs IRFB4620PBF |
| IRFB4020PBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFB4020PBF vs IRFB4020PBF |
| IRFB4103PBF | Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFB4020PBF vs IRFB4103PBF |
| IRFB4620PBF | Power Field-Effect Transistor, 25A I(D), 200V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRFB4020PBF vs IRFB4620PBF |