Datasheets
IRFB3806PBF by:

Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRFB3806PBF by International Rectifier

Overview of IRFB3806PBF by International Rectifier

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Price & Stock for IRFB3806PBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   50
RFQ
Quest Components 43 A, 60 V, 0.0158 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 1
  • 1 $1.0125
$1.0125 Buy Now
Quest Components 43 A, 60 V, 0.0158 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 128
  • 1 $1.9400
  • 14 $1.1640
  • 53 $0.9700
$0.9700 / $1.9400 Buy Now
Rochester Electronics IRFB3806 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 400
  • 1 $0.5855
  • 25 $0.5738
  • 100 $0.5504
  • 500 $0.5270
  • 1,000 $0.4977
$0.4977 / $0.5855 Buy Now

Part Details for IRFB3806PBF

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IRFB3806PBF Part Data Attributes:

IRFB3806PBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRFB3806PBF International Rectifier Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description LEAD FREE, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 73 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 43 A
Drain-source On Resistance-Max 0.0158 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 71 W
Pulsed Drain Current-Max (IDM) 170 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFB3806PBF

This table gives cross-reference parts and alternative options found for IRFB3806PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB3806PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFZ24VSTRR Power Field-Effect Transistor, 17A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRFB3806PBF vs IRFZ24VSTRR
IRFZ24VS Power Field-Effect Transistor, 17A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRFB3806PBF vs IRFZ24VS
IPD640N06LG Power Field-Effect Transistor, 18A I(D), 60V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG IRFB3806PBF vs IPD640N06LG
IRFZ24VSTRL Power Field-Effect Transistor, 17A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRFB3806PBF vs IRFZ24VSTRL
IRFZ24VL Power Field-Effect Transistor, 17A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN International Rectifier IRFB3806PBF vs IRFZ24VL
IRFZ24VSTRRPBF Power Field-Effect Transistor, 17A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRFB3806PBF vs IRFZ24VSTRRPBF

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