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Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31K1926
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Newark | N Channel Mosfet, 75V, 180A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:75V, Continuous Drain Current Id:180A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRFB3207PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 534 |
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$1.8000 / $2.8500 | Buy Now |
DISTI #
IRFB3207PBF-ND
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DigiKey | MOSFET N-CH 75V 170A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube | Temporarily Out of Stock |
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$1.3065 / $2.8000 | Buy Now |
DISTI #
IRFB3207PBF
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Avnet Americas | Trans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3207PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$1.1759 / $1.4371 | Buy Now |
DISTI #
942-IRFB3207PBF
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Mouser Electronics | MOSFET MOSFT 75V 180A 4.5mOhm 180nC RoHS: Compliant | 637 |
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$1.3000 / $2.8600 | Buy Now |
DISTI #
70016923
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RS | MOSFET, Power, N-Ch, VDSS 75V, RDS(ON) 3.6 Milliohms, ID 180A, TO-220AB, PD 330W,-55C | Infineon IRFB3207PBF RoHS: Not Compliant Min Qty: 350 Package Multiple: 1 Container: Bulk | 0 |
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$6.9020 | RFQ |
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Future Electronics | Single N-Channel 75 V 4.5 mOhm 260 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 350 Container: Tube | 6000Tube |
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$1.3300 / $1.4100 | Buy Now |
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Future Electronics | Single N-Channel 75 V 4.5 mOhm 260 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 236Tube |
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$1.3300 / $1.5200 | Buy Now |
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Bristol Electronics | 33 |
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RFQ | ||
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Rochester Electronics | IRFB3207 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 900 |
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$1.3000 / $1.5200 | Buy Now |
DISTI #
IRFB3207PBF
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Avnet Americas | Trans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3207PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$1.1759 / $1.4371 | Buy Now |
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IRFB3207PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFB3207PBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 910 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.0045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 720 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFB3207PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB3207PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFB3207 | Power Field-Effect Transistor, 180A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IRFB3207PBF vs IRFB3207 |
IRFB3207PBF | Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRFB3207PBF vs IRFB3207PBF |
AUIRFB3207 | Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | IRFB3207PBF vs AUIRFB3207 |
IRFB3207 | Power Field-Effect Transistor, 180A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRFB3207PBF vs IRFB3207 |