Datasheets
IRFB3207PBF by:

Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRFB3207PBF by Infineon Technologies AG

Overview of IRFB3207PBF by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFB3207PBF

Part # Distributor Description Stock Price Buy
DISTI # 31K1926
Newark N Channel Mosfet, 75V, 180A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:75V, Continuous Drain Current Id:180A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRFB3207PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 534
  • 1 $2.8500
  • 10 $2.5000
  • 25 $2.4400
  • 50 $2.2400
  • 100 $2.0200
  • 250 $1.9100
  • 500 $1.8000
$1.8000 / $2.8500 Buy Now
DISTI # IRFB3207PBF-ND
DigiKey MOSFET N-CH 75V 170A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube Temporarily Out of Stock
  • 1 $2.8000
  • 10 $2.3490
  • 100 $1.9002
  • 500 $1.6890
  • 1,000 $1.4462
  • 2,000 $1.3618
  • 5,000 $1.3065
$1.3065 / $2.8000 Buy Now
DISTI # IRFB3207PBF
Avnet Americas Trans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3207PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.4371
  • 1,200 $1.3936
  • 2,200 $1.3500
  • 5,000 $1.3065
  • 10,000 $1.2630
  • 50,000 $1.2194
  • 100,000 $1.1759
$1.1759 / $1.4371 Buy Now
DISTI # 942-IRFB3207PBF
Mouser Electronics MOSFET MOSFT 75V 180A 4.5mOhm 180nC RoHS: Compliant 637
  • 1 $2.8600
  • 10 $2.4000
  • 25 $2.2900
  • 100 $1.9400
  • 500 $1.7300
  • 1,000 $1.4400
  • 2,000 $1.3600
  • 5,000 $1.3000
$1.3000 / $2.8600 Buy Now
DISTI # 70016923
RS MOSFET, Power, N-Ch, VDSS 75V, RDS(ON) 3.6 Milliohms, ID 180A, TO-220AB, PD 330W,-55C | Infineon IRFB3207PBF RoHS: Not Compliant Min Qty: 350 Package Multiple: 1 Container: Bulk 0
  • 350 $6.9020
$6.9020 RFQ
Future Electronics Single N-Channel 75 V 4.5 mOhm 260 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 350 Container: Tube 6000
Tube
  • 50 $1.4100
  • 700 $1.3900
  • 1,050 $1.3700
  • 1,750 $1.3600
  • 3,500 $1.3300
$1.3300 / $1.4100 Buy Now
Future Electronics Single N-Channel 75 V 4.5 mOhm 260 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 236
Tube
  • 1 $1.5200
  • 40 $1.4700
  • 150 $1.4300
  • 400 $1.4000
  • 1,500 $1.3300
$1.3300 / $1.5200 Buy Now
Bristol Electronics   33
RFQ
Rochester Electronics IRFB3207 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 900
  • 1 $1.5200
  • 25 $1.4900
  • 100 $1.4300
  • 500 $1.3700
  • 1,000 $1.3000
$1.3000 / $1.5200 Buy Now
DISTI # IRFB3207PBF
Avnet Americas Trans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3207PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.4371
  • 1,200 $1.3936
  • 2,200 $1.3500
  • 5,000 $1.3065
  • 10,000 $1.2630
  • 50,000 $1.2194
  • 100,000 $1.1759
$1.1759 / $1.4371 Buy Now
DISTI # IRFB3207PBF
TME Transistor: N-MOSFET, unipolar, 75V, 120A, 330W, TO220AB Min Qty: 1 72
  • 1 $3.8700
  • 3 $3.4800
  • 10 $3.0800
  • 50 $2.6800
$2.6800 / $3.8700 Buy Now
Ameya Holding Limited Single N-Channel 75 V 4.5 mOhm 260 nC HEXFET® Power Mosfet - TO-220-3 10000
RFQ
DISTI # SP001572410
EBV Elektronik Trans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB (Alt: SP001572410) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 75V 170A 330W 4.5m10V75A 4V250uA 1PCSNChannel TO-220AB MOSFETs ROHS 21802
  • 1 $1.1249
  • 10 $0.9525
  • 50 $0.7845
  • 100 $0.6764
  • 350 $0.6282
  • 1,050 $0.6063
$0.6063 / $1.1249 Buy Now
New Advantage Corporation Single N-Channel 75 V 4.5 mOhm 260 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 4900
  • 100 $1.5400
  • 4,900 $1.4400
$1.4400 / $1.5400 Buy Now
Sense Electronic Company Limited TO-220 14200
RFQ

Part Details for IRFB3207PBF

IRFB3207PBF CAD Models

IRFB3207PBF Part Data Attributes:

IRFB3207PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFB3207PBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 910 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 720 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFB3207PBF

This table gives cross-reference parts and alternative options found for IRFB3207PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB3207PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFB3207 Power Field-Effect Transistor, 180A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRFB3207PBF vs IRFB3207
IRFB3207PBF Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRFB3207PBF vs IRFB3207PBF
AUIRFB3207 Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG IRFB3207PBF vs AUIRFB3207
IRFB3207 Power Field-Effect Transistor, 180A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRFB3207PBF vs IRFB3207
Part Number Description Manufacturer Compare
IRFB3207 Power Field-Effect Transistor, 180A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRFB3207PBF vs IRFB3207
IRFB3207PBF Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRFB3207PBF vs IRFB3207PBF
AUIRFB3207 Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG IRFB3207PBF vs AUIRFB3207
IRFB3207 Power Field-Effect Transistor, 180A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRFB3207PBF vs IRFB3207

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