Datasheets
IRFB3206GPBF by:

Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRFB3206GPBF by International Rectifier

Overview of IRFB3206GPBF by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for IRFB3206GPBF

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IRFB3206GPBF Part Data Attributes:

IRFB3206GPBF International Rectifier
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IRFB3206GPBF International Rectifier Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 170 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.003 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 840 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFB3206GPBF

This table gives cross-reference parts and alternative options found for IRFB3206GPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB3206GPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFB3206GPBF Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRFB3206GPBF vs IRFB3206GPBF
IRFB3206PBF Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFB3206GPBF vs IRFB3206PBF
Part Number Description Manufacturer Compare
IRFB3206GPBF Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRFB3206GPBF vs IRFB3206GPBF
IRFB3206PBF Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFB3206GPBF vs IRFB3206PBF

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