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Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFB20N50KPBF-ND
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DigiKey | MOSFET N-CH 500V 20A TO220AB Min Qty: 1 Lead time: 14 Weeks Container: Tube |
792 In Stock |
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$2.4495 / $5.0300 | Buy Now |
DISTI #
70459434
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RS | MOSFET N-CH 500V 20A TO-220AB | Siliconix / Vishay IRFB20N50KPBF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Container: Bulk | 0 |
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$3.7000 / $4.3600 | RFQ |
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IRFB20N50KPBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRFB20N50KPBF
Vishay Siliconix
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | TO-220AB | |
Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 330 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.25 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFB20N50KPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB20N50KPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFB20N50KPBF | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFB20N50KPBF vs IRFB20N50KPBF |
IRFB20N50KPBF | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | IRFB20N50KPBF vs IRFB20N50KPBF |
SIHFB20N50K-E3 | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Intertechnologies | IRFB20N50KPBF vs SIHFB20N50K-E3 |
IRFB20N50K | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Vishay Intertechnologies | IRFB20N50KPBF vs IRFB20N50K |