Datasheets
IRF9Z34STRLPBF by:

Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,

Part Details for IRF9Z34STRLPBF by Vishay Intertechnologies

Overview of IRF9Z34STRLPBF by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRF9Z34STRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 31K2315
Newark P Channel Mosfet, -60V, 18A, D2-Pak, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:18A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRF9Z34STRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.6700
  • 2,000 $1.5900
  • 4,000 $1.4800
  • 8,000 $1.3800
  • 12,000 $1.3300
  • 20,000 $1.3100
$1.3100 / $1.6700 Buy Now
DISTI # 05W6873
Newark Mosfet, P Ch, -60V, -18A, To-263-3, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:18A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay IRF9Z34STRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $1.5900
$1.5900 Buy Now
DISTI # IRF9Z34STRLPBF
Avnet Americas Trans MOSFET P-CH 60V 18A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF9Z34STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel 8000
  • 800 $1.2000
$1.2000 Buy Now
DISTI # 844-IRF9Z34STRLPBF
Mouser Electronics MOSFET P-Chan 60V 18 Amp RoHS: Compliant 4024
  • 1 $1.7200
  • 10 $1.4500
$1.4500 / $1.7200 Buy Now
Future Electronics Single P-Channel 60 V 0.14 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 6400
Reel
  • 800 $0.8350
  • 1,600 $0.8150
  • 2,400 $0.8050
  • 3,200 $0.7950
  • 4,000 $0.7700
$0.7700 / $0.8350 Buy Now
Future Electronics Single P-Channel 60 V 0.14 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $0.8350
  • 1,600 $0.8150
  • 2,400 $0.8050
  • 3,200 $0.7950
  • 4,000 $0.7700
$0.7700 / $0.8350 Buy Now
Quest Components   110
  • 1 $2.6800
  • 46 $1.4740
  • 103 $1.3400
$1.3400 / $2.6800 Buy Now
DISTI # IRF9Z34STRLPBF
TTI MOSFET P-Chan 60V 18 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel Americas - 32000
In Stock
  • 800 $1.0900
  • 1,600 $0.9100
$0.9100 / $1.0900 Buy Now
DISTI # IRF9Z34STRLPBF
Avnet Asia Trans MOSFET P-CH 60V 18A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF9Z34STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 14 Weeks, 0 Days 0
RFQ
DISTI # IRF9Z34STRLPBF
EBV Elektronik Trans MOSFET P-CH 60V 18A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF9Z34STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRF9Z34STRLPBF

IRF9Z34STRLPBF CAD Models

IRF9Z34STRLPBF Part Data Attributes:

IRF9Z34STRLPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF9Z34STRLPBF Vishay Intertechnologies Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 370 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.14 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 88 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9Z34STRLPBF

This table gives cross-reference parts and alternative options found for IRF9Z34STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9Z34STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF9Z34STRLPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRF9Z34STRLPBF vs IRF9Z34STRLPBF
IRF9Z34S Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Vishay Intertechnologies IRF9Z34STRLPBF vs IRF9Z34S
IRF9Z34STRRPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF9Z34STRLPBF vs IRF9Z34STRRPBF
IRF9Z34STRRPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Vishay Intertechnologies IRF9Z34STRLPBF vs IRF9Z34STRRPBF
SIHF9Z34STRL-GE3 TRANSISTOR 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRF9Z34STRLPBF vs SIHF9Z34STRL-GE3
IRF9Z34STRR Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF9Z34STRLPBF vs IRF9Z34STRR
IRF9Z34STRRPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRF9Z34STRLPBF vs IRF9Z34STRRPBF
IRF9Z34STRR Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Vishay Intertechnologies IRF9Z34STRLPBF vs IRF9Z34STRR
IRF9Z34S Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRF9Z34STRLPBF vs IRF9Z34S
IRF9Z34SPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRF9Z34STRLPBF vs IRF9Z34SPBF
Part Number Description Manufacturer Compare
IRF9Z34STRR Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRF9Z34STRLPBF vs IRF9Z34STRR
IRF9Z34SPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Vishay Intertechnologies IRF9Z34STRLPBF vs IRF9Z34SPBF
IRF9Z34S Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Vishay Intertechnologies IRF9Z34STRLPBF vs IRF9Z34S
IRF9Z34STRRPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Vishay Intertechnologies IRF9Z34STRLPBF vs IRF9Z34STRRPBF
SIHF9Z34STRL-GE3 TRANSISTOR 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRF9Z34STRLPBF vs SIHF9Z34STRL-GE3
IRF9Z34STRR Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Vishay Intertechnologies IRF9Z34STRLPBF vs IRF9Z34STRR
IRF9Z34S Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRF9Z34STRLPBF vs IRF9Z34S

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