Datasheets
IRF9Z34STRLPBF by:

Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

Part Details for IRF9Z34STRLPBF by International Rectifier

Overview of IRF9Z34STRLPBF by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for IRF9Z34STRLPBF

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IRF9Z34STRLPBF Part Data Attributes:

IRF9Z34STRLPBF International Rectifier
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IRF9Z34STRLPBF International Rectifier Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK
Package Description TO-263, 3 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 370 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.14 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 88 W
Power Dissipation-Max (Abs) 88 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9Z34STRLPBF

This table gives cross-reference parts and alternative options found for IRF9Z34STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9Z34STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF9Z34STRLPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRF9Z34STRLPBF vs IRF9Z34STRLPBF
IRF9Z34S Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Vishay Intertechnologies IRF9Z34STRLPBF vs IRF9Z34S
IRF9Z34STRRPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF9Z34STRLPBF vs IRF9Z34STRRPBF
IRF9Z34STRRPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Vishay Intertechnologies IRF9Z34STRLPBF vs IRF9Z34STRRPBF
SIHF9Z34STRL-GE3 TRANSISTOR 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRF9Z34STRLPBF vs SIHF9Z34STRL-GE3
IRF9Z34STRR Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF9Z34STRLPBF vs IRF9Z34STRR
IRF9Z34STRRPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRF9Z34STRLPBF vs IRF9Z34STRRPBF
IRF9Z34STRR Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Vishay Intertechnologies IRF9Z34STRLPBF vs IRF9Z34STRR
IRF9Z34S Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRF9Z34STRLPBF vs IRF9Z34S
IRF9Z34SPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRF9Z34STRLPBF vs IRF9Z34SPBF
Part Number Description Manufacturer Compare
HUF76409D3 18A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Rochester Electronics LLC IRF9Z34STRLPBF vs HUF76409D3
BUK9575-55A TRANSISTOR 20 A, 55 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power NXP Semiconductors IRF9Z34STRLPBF vs BUK9575-55A
HUF76413D3S 20A, 60V, 0.061ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRF9Z34STRLPBF vs HUF76413D3S
FDD3860 Power Field-Effect Transistor, 6.2A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Fairchild Semiconductor Corporation IRF9Z34STRLPBF vs FDD3860
MTD20N06HD 20A, 60V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC IRF9Z34STRLPBF vs MTD20N06HD
IRF9Z34STRRPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRF9Z34STRLPBF vs IRF9Z34STRRPBF
HUF76409D3 17A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation IRF9Z34STRLPBF vs HUF76409D3
AUIRF9Z34N Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 International Rectifier IRF9Z34STRLPBF vs AUIRF9Z34N
RFD14N05_NL 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN Rochester Electronics LLC IRF9Z34STRLPBF vs RFD14N05_NL
HUFA76419D3S 20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRF9Z34STRLPBF vs HUFA76419D3S

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