Datasheets
IRF9610STRRPBF by:

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3

Part Details for IRF9610STRRPBF by Vishay Intertechnologies

Overview of IRF9610STRRPBF by Vishay Intertechnologies

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Price & Stock for IRF9610STRRPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF9610STRRPBF
Avnet Americas N-CHANNEL200V (Alt: IRF9610STRRPBF) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks, 0 Days 0
  • 800 $0.3250
  • 1,600 $0.3198
  • 3,200 $0.3146
  • 4,800 $0.3094
  • 6,400 $0.3058
$0.3058 / $0.3250 Buy Now
DISTI # 78-IRF9610STRRPBF
Mouser Electronics MOSFETs TO263 200V 1.8A N-CH MOSFET RoHS: Compliant 538
  • 1 $0.8700
  • 10 $0.7090
  • 100 $0.5520
  • 500 $0.4460
  • 800 $0.3630
  • 2,400 $0.3300
  • 4,800 $0.3250
$0.3250 / $0.8700 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 0
  • 800 $0.3430
$0.3430 Buy Now
DISTI # IRF9610STRRPBF
TTI MOSFETs TO263 200V 1.8A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel Americas - 0
  • 800 $0.3560
  • 1,600 $0.3440
  • 2,400 $0.3320
  • 4,000 $0.3250
$0.3250 / $0.3560 Buy Now

Part Details for IRF9610STRRPBF

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IRF9610STRRPBF Part Data Attributes

IRF9610STRRPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF9610STRRPBF Vishay Intertechnologies Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 1.8 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 7 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9610STRRPBF

This table gives cross-reference parts and alternative options found for IRF9610STRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9610STRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF9610S Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF9610STRRPBF vs IRF9610S
IRF9610STRR Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF9610STRRPBF vs IRF9610STRR
IRF9610SPBF Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3 Vishay Intertechnologies IRF9610STRRPBF vs IRF9610SPBF
IRF9610S Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRF9610STRRPBF vs IRF9610S
Part Number Description Manufacturer Compare
IRF9610SPBF Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3 Vishay Intertechnologies IRF9610STRRPBF vs IRF9610SPBF
IRF9610S Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN Vishay Intertechnologies IRF9610STRRPBF vs IRF9610S
IRF9610STRR Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF9610STRRPBF vs IRF9610STRR
IRF9610S Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRF9610STRRPBF vs IRF9610S
IRF9610S Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF9610STRRPBF vs IRF9610S

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