Datasheets
IRF9540NPBF by:
Infineon Technologies AG
Honest Han
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRF9540NPBF by Infineon Technologies AG

Results Overview of IRF9540NPBF by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRF9540NPBF Information

IRF9540NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF9540NPBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7431
Newark P Channel Mosfet, -100V, -23A, To-220Ab, Channel Type:P Channel, Drain Source Voltage Vds:100V, C... ontinuous Drain Current Id:23A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF9540NPBF more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 55649
  • 1 $1.7600
  • 10 $0.9410
  • 100 $0.8260
  • 500 $0.6780
  • 1,000 $0.5860
  • 3,000 $0.5800
  • 10,000 $0.5320
$0.5320 / $1.7600 Buy Now
DISTI # IRF9540NPBF-ND
DigiKey MOSFET P-CH 100V 23A TO220AB Min Qty: 1 Lead time: 8 Weeks Container: Tube 9542
In Stock
  • 1 $1.7700
  • 50 $0.8920
  • 100 $0.8337
  • 500 $0.6711
  • 1,000 $0.5911
  • 2,000 $0.5677
  • 5,000 $0.5166
  • 10,000 $0.5125
$0.5125 / $1.7700 Buy Now
DISTI # IRF9540NPBF
Avnet Americas Power MOSFET, P Channel, 100 V, 23 A, 117 mOhm, TO-220AB, 3 Pins, Through Hole - Rail/Tube (Alt: IRF... 9540NPBF) more RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Tube 637
  • 50 $0.4361
  • 60 $0.4339
  • 110 $0.4055
  • 250 $0.4007
  • 500 $0.3952
$0.3952 / $0.4361 Buy Now
DISTI # 63J7431
Avnet Americas Power MOSFET, P Channel, 100 V, 23 A, 117 mOhm, TO-220AB, 3 Pins, Through Hole - Bulk (Alt: 63J7431) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Bulk 0
  • 1 $1.5200
  • 10 $0.8920
  • 100 $0.7750
  • 500 $0.6480
  • 1,000 $0.6070
$0.6070 / $1.5200 Buy Now
DISTI # 942-IRF9540NPBF
Mouser Electronics MOSFETs MOSFT PCh -100V -23A 117mOhm 64.7nC RoHS: Compliant 8071
  • 1 $1.5400
  • 10 $1.3900
  • 25 $0.8850
  • 100 $0.7900
  • 250 $0.7890
  • 500 $0.6580
  • 1,000 $0.5700
  • 2,000 $0.5650
  • 5,000 $0.5160
$0.5160 / $1.5400 Buy Now
DISTI # E02:0323_00010970
Arrow Electronics Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2432 Europe - 2499
  • 1 $1.0574
  • 10 $0.7637
  • 100 $0.6599
  • 500 $0.5730
  • 1,000 $0.5084
  • 3,000 $0.4922
  • 10,000 $0.4748
$0.4748 / $1.0574 Buy Now
DISTI # V36:1790_13889759
Arrow Electronics Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks Date Code: 2330 Americas - 145
  • 1,000 $0.4657
  • 3,000 $0.4509
  • 10,000 $0.4350
$0.4350 / $0.4657 Buy Now
DISTI # V99:2348_13889759
Arrow Electronics Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2234 Americas - 25
  • 1 $0.8087
  • 10 $0.6433
  • 100 $0.5764
  • 500 $0.5166
  • 1,000 $0.4743
  • 3,000 $0.4596
  • 10,000 $0.4410
$0.4410 / $0.8087 Buy Now
DISTI # 70017013
RS Power MOSFET, P-Ch, VDSS -100V, RDS(ON) 0.117Ohm, ID -23A, TO-220AB, PD 140W, VGS+/-20V | Infineon I... RF9540NPBF more RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $1.7300
  • 5 $1.5900
  • 10 $1.5200
  • 100 $1.3800
  • 250 $1.3000
$1.3000 / $1.7300 RFQ
Future Electronics Single P-Channel 100 V 0.117 Ohm 97 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Container: Tube 3636
Tube
  • 1 $0.4500
  • 75 $0.4400
  • 250 $0.4300
  • 1,000 $0.4150
  • 3,000 $0.3950
$0.3950 / $0.4500 Buy Now
Future Electronics Single P-Channel 100 V 0.117 Ohm 97 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Container: Tube 2
Tube
  • 1 $0.4500
  • 75 $0.4400
  • 250 $0.4300
  • 1,000 $0.4150
  • 3,000 $0.3950
$0.3950 / $0.4500 Buy Now
DISTI # 69265898
Verical Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 95 Package Multiple: 1 Date Code: 2148 Americas - 13379
  • 97 $0.7760
$0.7760 Buy Now
DISTI # 82390299
Verical Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 81 Package Multiple: 1 Date Code: 2337 Americas - 4937
  • 83 $0.7760
$0.7760 Buy Now
DISTI # 83685369
Verical Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 13 Package Multiple: 1 Date Code: 2432 Americas - 2499
  • 13 $0.7433
  • 100 $0.6423
  • 500 $0.5577
  • 1,000 $0.4948
  • 3,000 $0.4791
  • 10,000 $0.4622
$0.4622 / $0.7433 Buy Now
DISTI # 75699045
Verical Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 63 Package Multiple: 1 Date Code: 2301 Americas - 1980
  • 63 $1.3744
  • 100 $1.3129
  • 250 $1.2602
  • 500 $1.2147
  • 1,000 $1.1751
$1.1751 / $1.3744 Buy Now
DISTI # 70807313
Verical Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 145 Package Multiple: 145 Date Code: 2330 Americas - 145
  • 145 $0.4657
  • 3,000 $0.4509
  • 10,000 $0.4350
$0.4350 / $0.4657 Buy Now
DISTI # 67611358
Verical Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 63 Package Multiple: 1 Date Code: 2201 Americas - 74
  • 63 $1.3744
$1.3744 Buy Now
DISTI # 65040204
Verical Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 13 Package Multiple: 1 Date Code: 2234 Americas - 25
  • 13 $0.6433
  • 100 $0.5764
  • 500 $0.5166
  • 1,000 $0.4743
  • 3,000 $0.4596
$0.4596 / $0.6433 Buy Now
Bristol Electronics   Min Qty: 4 40
  • 4 $1.5000
  • 15 $0.9750
$0.9750 / $1.5000 Buy Now
Quest Components 23 A, 100 V, 0.117 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-220AB 59
  • 1 $3.0240
  • 12 $1.8900
  • 41 $1.6632
$1.6632 / $3.0240 Buy Now
Quest Components 23 A, 100 V, 0.117 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-220AB 32
  • 1 $2.0000
  • 4 $1.6000
  • 14 $1.0000
$1.0000 / $2.0000 Buy Now
DISTI # IRF9540NPBF
TME Transistor: P-MOSFET, unipolar, -100V, -23A, 140W, TO220AB Min Qty: 1 626
  • 1 $1.1700
  • 10 $0.9350
  • 50 $0.7940
  • 100 $0.7350
  • 250 $0.6520
  • 500 $0.5970
  • 1,000 $0.5460
  • 2,000 $0.5380
$0.5380 / $1.1700 Buy Now
Ameya Holding Limited Single P-Channel 100 V 0.117 Ohm 97 nC HEXFET® Power Mosfet - TO-220-3 10000
RFQ
DISTI # SMC-IRF9540NPBF
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 2000
RFQ
Chip 1 Exchange INSTOCK 5090
RFQ
DISTI # IRF9540NPBF
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Tube 13379
  • 5 $0.7760
  • 10 $0.6170
  • 50 $0.5250
  • 100 $0.4490
  • 200 $0.4260
  • 500 $0.3980
$0.3980 / $0.7760 Buy Now
DISTI # SP001560174
EBV Elektronik Power MOSFET P Channel 100 V 23 A 117 mOhm TO220AB 3 Pins Through Hole (Alt: SP001560174) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 9 Weeks, 0 Days EBV - 1000
Buy Now
LCSC 100V 23A 140W 0.11710V11A 2V 1 piece P-channel TO-220-3 MOSFETs ROHS 304
  • 1 $0.3517
  • 10 $0.2823
  • 30 $0.2484
  • 100 $0.2021
  • 500 $0.1944
  • 1,000 $0.1882
$0.1882 / $0.3517 Buy Now
New Advantage Corporation Single P-Channel 100 V 0.117 Ohm 97 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 1000 1000
  • 1,000 $0.8661
$0.8661 Buy Now
Win Source Electronics MOSFET P-CH 100V 23A TO-220AB 228000
  • 230 $0.2183
  • 490 $0.2043
  • 765 $0.1972
  • 1,095 $0.1831
  • 1,420 $0.1761
  • 1,775 $0.1691
$0.1691 / $0.2183 Buy Now

Part Details for IRF9540NPBF

IRF9540NPBF CAD Models

IRF9540NPBF Part Data Attributes

IRF9540NPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF9540NPBF Infineon Technologies AG Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks, 1 Day
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 430 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.117 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 140 W
Pulsed Drain Current-Max (IDM) 76 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9540NPBF

This table gives cross-reference parts and alternative options found for IRF9540NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9540NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
AUIRF9540N Infineon Technologies AG Check for Price Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 IRF9540NPBF vs AUIRF9540N
Part Number Manufacturer Composite Price Description Compare
IRF9540NPBF International Rectifier Check for Price Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRF9540NPBF vs IRF9540NPBF
IRFP9151 Harris Semiconductor Check for Price Power Field-Effect Transistor, 25A I(D), 80V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 IRF9540NPBF vs IRFP9151
IRF9540N International Rectifier Check for Price Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF9540NPBF vs IRF9540N
IRFP9150 Intersil Corporation Check for Price 25A, 100V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 IRF9540NPBF vs IRFP9150
IRFP9151 Intersil Corporation Check for Price 25A, 80V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 IRF9540NPBF vs IRFP9151
IRFP9150 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 25A I(D), 100V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 IRF9540NPBF vs IRFP9150

IRF9540NPBF Related Parts

IRF9540NPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF9540NPBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.

  • The recommended gate drive voltage for the IRF9540NPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRF9540NPBF is suitable for switching applications due to its low RDS(on) and high switching speed. However, ensure proper gate drive and layout to minimize switching losses.

  • Use a suitable voltage regulator and overcurrent protection circuitry to prevent damage from overvoltage and overcurrent conditions.