Part Details for IRF9530NSTRRPBF by Infineon Technologies AG
Overview of IRF9530NSTRRPBF by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF9530NSTRRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IRF9530NS - 100V Single P-Channel IR MOSFET in a D2-Pak package ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 5600 |
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$0.8925 / $1.0500 | Buy Now |
DISTI #
IRF9530NSTRRPBF
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TME | Transistor: P-MOSFET, unipolar, -100V, -14A, 3.8W, D2PAK Min Qty: 800 | 0 |
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$0.4100 | RFQ |
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Chip1Cloud | MOSFET P-CH 100V 14A D2PAK | 21000 |
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RFQ | |
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Win Source Electronics | MOSFET P-CH 100V 14A D2PAK | 199080 |
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$0.4150 / $0.6220 | Buy Now |
Part Details for IRF9530NSTRRPBF
IRF9530NSTRRPBF CAD Models
IRF9530NSTRRPBF Part Data Attributes:
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IRF9530NSTRRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF9530NSTRRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 250 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 79 W | |
Pulsed Drain Current-Max (IDM) | 56 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF9530NSTRRPBF
This table gives cross-reference parts and alternative options found for IRF9530NSTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9530NSTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF9530NSPBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF9530NSTRRPBF vs IRF9530NSPBF |
IRF9530NSTRRPBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF9530NSTRRPBF vs IRF9530NSTRRPBF |
IRF9530NSTRLPBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF9530NSTRRPBF vs IRF9530NSTRLPBF |
IRF9530NSTRLPBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF9530NSTRRPBF vs IRF9530NSTRLPBF |