Datasheets
IRF9530NSTRRPBF by:
Infineon Technologies AG
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRF9530NSTRRPBF by Infineon Technologies AG

Results Overview of IRF9530NSTRRPBF by Infineon Technologies AG

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IRF9530NSTRRPBF Information

IRF9530NSTRRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF9530NSTRRPBF

Part # Distributor Description Stock Price Buy
DISTI # 85954830
Verical Trans MOSFET P-CH Si 100V 14A 3-Pin(2+Tab) D2PAK T/R Min Qty: 320 Package Multiple: 1 Date Code: 2201 Americas - 5600
  • 320 $1.1750
  • 500 $1.1250
  • 1,000 $1.0625
$1.0625 / $1.1750 Buy Now
Rochester Electronics 100V Single P-Channel IR MOSFET in a D2-Pak package RoHS: Compliant Status: Obsolete Min Qty: 1 5600
  • 1 $1.0000
  • 25 $0.9800
  • 100 $0.9400
  • 500 $0.9000
  • 1,000 $0.8500
$0.8500 / $1.0000 Buy Now
DISTI # IRF9530NSTRRPBF
TME Transistor: P-MOSFET, unipolar, -100V, -14A, 3.8W, D2PAK Min Qty: 800 0
  • 800 $0.3880
$0.3880 RFQ
DISTI # SP001572446
EBV Elektronik Trans MOSFET PCH 100V 14A 3Pin2Tab D2PAK TR (Alt: SP001572446) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET P-CH 100V 14A D2PAK 26770
  • 130 $0.3875
  • 280 $0.3625
  • 430 $0.3500
  • 620 $0.3250
  • 800 $0.3125
  • 1,000 $0.3000
$0.3000 / $0.3875 Buy Now

Part Details for IRF9530NSTRRPBF

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IRF9530NSTRRPBF Part Data Attributes

IRF9530NSTRRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF9530NSTRRPBF Infineon Technologies AG Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description LEAD FREE, PLASTIC, D2PAK-3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 79 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9530NSTRRPBF

This table gives cross-reference parts and alternative options found for IRF9530NSTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9530NSTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF9530NS Infineon Technologies AG Check for Price Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRF9530NSTRRPBF vs IRF9530NS
IRF9530NSTRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9530NSTRRPBF vs IRF9530NSTRLPBF
IRF9530NSPBF International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9530NSTRRPBF vs IRF9530NSPBF
IRF9530NSPBF Infineon Technologies AG $0.7008 Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9530NSTRRPBF vs IRF9530NSPBF
IRF9530NS International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRF9530NSTRRPBF vs IRF9530NS

IRF9530NSTRRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF9530NSTRRPBF is -55°C to 175°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.

  • The recommended gate drive voltage for the IRF9530NSTRRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the IRF9530NSTRRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-safe environment.

  • The maximum allowable power dissipation for the IRF9530NSTRRPBF is 150W, but this value can be derated based on the operating temperature and other factors.