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Transistors / Power Field-Effect Transistors / IRF9530NSPBF
Datasheets
IRF9530NSPBF by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRF9530NSPBF by International Rectifier

Results Overview of IRF9530NSPBF by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRF9530NSPBF Information

IRF9530NSPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF9530NSPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   284
RFQ
Bristol Electronics   7
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 100V, 0.2OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SE... MICONDUCTOR FET more 1
  • 1 $0.7785
$0.7785 Buy Now

Part Details for IRF9530NSPBF

IRF9530NSPBF CAD Models

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IRF9530NSPBF Part Data Attributes

Parametric Data
IRF9530NSPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF9530NSPBF International Rectifier Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description LEAD FREE, PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9530NSPBF

This table gives cross-reference parts and alternative options found for IRF9530NSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9530NSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF9530NS Infineon Technologies AG Check for Price Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRF9530NSPBF vs IRF9530NS
IRF9530NSTRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9530NSPBF vs IRF9530NSTRLPBF
IRF9530NSTRRPBF Infineon Technologies AG $0.3880 Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9530NSPBF vs IRF9530NSTRRPBF
IRF9530NSPBF Infineon Technologies AG $0.7008 Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9530NSPBF vs IRF9530NSPBF
IRF9530NS International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRF9530NSPBF vs IRF9530NS

IRF9530NSPBF Related Parts

IRF9530NSPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF9530NSPBF is -55°C to 175°C.

  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 10V and 100V, depending on the application.

  • The recommended gate resistor value for the IRF9530NSPBF is between 1kΩ and 10kΩ, depending on the switching frequency and application requirements.

  • To protect the IRF9530NSPBF from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage, and a current sense resistor or a fuse to limit the current.

  • The maximum allowable power dissipation for the IRF9530NSPBF is 125W, but this can be increased with proper heat sinking and thermal management.