Datasheets
IRF9530NS by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

Part Details for IRF9530NS by International Rectifier

Results Overview of IRF9530NS by International Rectifier

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IRF9530NS Information

IRF9530NS by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF9530NS

Part # Distributor Description Stock Price Buy
Quest Components TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,14A I(D),TO-263AB 212
  • 1 $3.7500
  • 28 $2.5000
  • 101 $2.3125
$2.3125 / $3.7500 Buy Now
Quest Components TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,14A I(D),TO-263AB 68
  • 1 $1.3500
  • 14 $0.8100
  • 63 $0.6300
$0.6300 / $1.3500 Buy Now
Quest Components TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,14A I(D),TO-263AB 1
  • 1 $3.5223
$3.5223 Buy Now
Vyrian Transistors 1042
RFQ

Part Details for IRF9530NS

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IRF9530NS Part Data Attributes

IRF9530NS International Rectifier
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Compare Parts:
IRF9530NS International Rectifier Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9530NS

This table gives cross-reference parts and alternative options found for IRF9530NS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9530NS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF9530NS Infineon Technologies AG Check for Price Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRF9530NS vs IRF9530NS
IRF9530NSTRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9530NS vs IRF9530NSTRLPBF
IRF9530NSTRRPBF Infineon Technologies AG $0.3880 Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9530NS vs IRF9530NSTRRPBF
IRF9530NSPBF International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9530NS vs IRF9530NSPBF
IRF9530NSPBF Infineon Technologies AG $0.7008 Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9530NS vs IRF9530NSPBF

IRF9530NS Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IRF9530NS is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides guidelines for calculating the SOA for power MOSFETs.

  • The junction-to-case thermal resistance (RθJC) for the IRF9530NS can be calculated using the thermal resistance values provided in the datasheet. The RθJC is typically around 0.5°C/W for this device.

  • The recommended gate drive voltage for the IRF9530NS is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption.

  • Yes, the IRF9530NS is suitable for high-frequency switching applications up to several hundred kHz. However, the device's switching performance and power losses should be carefully evaluated to ensure reliable operation.

  • The IRF9530NS has a high peak current capability, which requires careful PCB design and layout to ensure that the device is not damaged due to excessive current surges. It is recommended to use a robust PCB design with adequate copper thickness and to follow proper layout guidelines to minimize inductance and resistance.