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Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
25M9849
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Newark | Mosfet Transistor, P Channel, 2.8 A, 100 V, 1.2 Ohm, -10 V, 4 V Rohs Compliant: Yes |Vishay IRF9510SPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 121 |
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$0.1520 | Buy Now |
DISTI #
IRF9510SPBF
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Avnet Americas | Trans MOSFET P-CH 100V 4A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: IRF9510SPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$0.8897 / $1.1302 | Buy Now |
DISTI #
25M9849
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Avnet Americas | Trans MOSFET P-CH 100V 4A 3-Pin(2+Tab) D2PAK - Bulk (Alt: 25M9849) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 4 Days Container: Bulk | 121 Partner Stock |
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$1.3500 / $1.9800 | Buy Now |
DISTI #
844-IRF9510SPBF
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Mouser Electronics | MOSFET P-Chan 100V 4.0 Amp RoHS: Compliant | 1689 |
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$0.8510 / $1.9600 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 | 0 |
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$0.8790 | Buy Now |
DISTI #
IRF9510SPBF
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TTI | MOSFET P-Chan 100V 4.0 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube | Americas - 0 |
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$0.8200 / $0.8800 | Buy Now |
DISTI #
IRF9510SPBF
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TME | Transistor: P-MOSFET, unipolar, -100V, -2.8A, 43W, D2PAK,TO263 Min Qty: 1 | 0 |
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$0.4650 / $0.8230 | RFQ |
DISTI #
IRF9510SPBF
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EBV Elektronik | Trans MOSFET P-CH 100V 4A 3-Pin(2+Tab) D2PAK (Alt: IRF9510SPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 9 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 100V 4A 1.22.4A10V 43W 4V250uA 1PCSPChannel TO-263 MOSFETs ROHS | 737 |
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$0.9982 / $1.5592 | Buy Now |
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IRF9510SPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF9510SPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks | |
Samacsys Manufacturer | Vishay | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 1.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 43 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF9510SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9510SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF9510STRLPBF | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Intertechnologies | IRF9510SPBF vs IRF9510STRLPBF |
IRF9510STRL | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Intertechnologies | IRF9510SPBF vs IRF9510STRL |