Part Details for IRF9510 by International Rectifier
Overview of IRF9510 by International Rectifier
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRF9510
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 7 | 34 |
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$0.4875 / $0.7500 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-220AB | 55 |
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$1.2400 / $1.5500 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-220AB | 27 |
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$0.5000 / $1.0000 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-220AB | 2100 |
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$0.6360 / $2.1200 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-220AB | 19 |
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$1.5500 / $2.4800 | Buy Now |
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ES Components | IRF9510 ADI# 16-1497200 INTERNATIONAL RECTIFIER BARE DIE | 289 in Stock |
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RFQ |
Part Details for IRF9510
IRF9510 CAD Models
IRF9510 Part Data Attributes
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IRF9510
International Rectifier
Buy Now
Datasheet
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IRF9510
International Rectifier
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 43 W | |
| Power Dissipation-Max (Abs) | 43 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9510
This table gives cross-reference parts and alternative options found for IRF9510. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9510, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF9510 | 3A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | IRF9510 vs IRF9510 |
| IRF9510PBF | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF9510 vs IRF9510PBF |
| IRF9510 | 3A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF9510 vs IRF9510 |
| IRF9510PBF | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | IRF9510 vs IRF9510PBF |
| IRF9510 | Power Field-Effect Transistor, 3A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | IRF9510 vs IRF9510 |
| IRF9510 | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Siliconix | IRF9510 vs IRF9510 |
| IRF9510 | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Vishay Intertechnologies | IRF9510 vs IRF9510 |
| IRF9510PBF | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | IRF9510 vs IRF9510PBF |
| IRF9510 | Power Field-Effect Transistor, 3A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF9510 vs IRF9510 |