Datasheets
IRF9130SMD05N by:

8A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD5, 3 PIN

Part Details for IRF9130SMD05N by TT Electronics Power and Hybrid / Semelab Limited

Overview of IRF9130SMD05N by TT Electronics Power and Hybrid / Semelab Limited

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Part Details for IRF9130SMD05N

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IRF9130SMD05N Part Data Attributes:

IRF9130SMD05N TT Electronics Power and Hybrid / Semelab Limited
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IRF9130SMD05N TT Electronics Power and Hybrid / Semelab Limited 8A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD5, 3 PIN
Part Life Cycle Code Active
Ihs Manufacturer SEMELAB LTD
Package Description CHIP CARRIER, R-CBCC-N3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CBCC-N3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for IRF9130SMD05N

This table gives cross-reference parts and alternative options found for IRF9130SMD05N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9130SMD05N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFN9130SMD05 Power Field-Effect Transistor, 8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD5, 3 PIN TT Electronics Resistors IRF9130SMD05N vs IRFN9130SMD05
IRF9130SMD05N Power Field-Effect Transistor, 8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD5, 3 PIN TT Electronics Resistors IRF9130SMD05N vs IRF9130SMD05N
IRFN9130SMD05-JQR-B 8A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD5, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF9130SMD05N vs IRFN9130SMD05-JQR-B
IRFN9130SMD05 8A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD5, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF9130SMD05N vs IRFN9130SMD05
IRFN9130SMD05-JQR-BR4 Power Field-Effect Transistor, 8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD5, 3 PIN TT Electronics Resistors IRF9130SMD05N vs IRFN9130SMD05-JQR-BR4
FQB8P10TM Power Field-Effect Transistor, 8A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation IRF9130SMD05N vs FQB8P10TM
IRFN9130SMD05R4 8A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD5, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF9130SMD05N vs IRFN9130SMD05R4
FQB8P10 Power Field-Effect Transistor, 8A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-2 Fairchild Semiconductor Corporation IRF9130SMD05N vs FQB8P10

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