Part Details for IRF9130SMD05N by TT Electronics Power and Hybrid / Semelab Limited
Overview of IRF9130SMD05N by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF9130SMD05N
IRF9130SMD05N CAD Models
IRF9130SMD05N Part Data Attributes:
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IRF9130SMD05N
TT Electronics Power and Hybrid / Semelab Limited
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Datasheet
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IRF9130SMD05N
TT Electronics Power and Hybrid / Semelab Limited
8A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD5, 3 PIN
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Part Life Cycle Code | Active | |
Ihs Manufacturer | SEMELAB LTD | |
Package Description | CHIP CARRIER, R-CBCC-N3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-CBCC-N3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |
Alternate Parts for IRF9130SMD05N
This table gives cross-reference parts and alternative options found for IRF9130SMD05N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9130SMD05N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFN9130SMD05 | Power Field-Effect Transistor, 8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD5, 3 PIN | TT Electronics Resistors | IRF9130SMD05N vs IRFN9130SMD05 |
IRF9130SMD05N | Power Field-Effect Transistor, 8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD5, 3 PIN | TT Electronics Resistors | IRF9130SMD05N vs IRF9130SMD05N |
IRFN9130SMD05-JQR-B | 8A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD5, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF9130SMD05N vs IRFN9130SMD05-JQR-B |
IRFN9130SMD05 | 8A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD5, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF9130SMD05N vs IRFN9130SMD05 |
IRFN9130SMD05-JQR-BR4 | Power Field-Effect Transistor, 8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD5, 3 PIN | TT Electronics Resistors | IRF9130SMD05N vs IRFN9130SMD05-JQR-BR4 |
FQB8P10TM | Power Field-Effect Transistor, 8A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | IRF9130SMD05N vs FQB8P10TM |
IRFN9130SMD05R4 | 8A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD5, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF9130SMD05N vs IRFN9130SMD05R4 |
FQB8P10 | Power Field-Effect Transistor, 8A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-2 | Fairchild Semiconductor Corporation | IRF9130SMD05N vs FQB8P10 |