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Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7419
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Newark | N Channel Mosfet, 500V, 8A, D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRF840SPBF Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
IRF840SPBF
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Avnet Americas | Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: IRF840SPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.8714 / $1.1070 | Buy Now |
DISTI #
844-IRF840SPBF
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Mouser Electronics | MOSFET 500V N-CH HEXFET D2-PA RoHS: Compliant | 5646 |
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$0.7760 / $1.8300 | Buy Now |
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Future Electronics | Single N-Channel 400 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 816Tube |
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$1.7800 / $2.0200 | Buy Now |
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Future Electronics | Single N-Channel 400 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.7800 / $2.0200 | Buy Now |
DISTI #
IRF840SPBF
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TTI | MOSFET 500V N-CH HEXFET D2-PA RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 15200 In Stock |
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$0.8600 / $1.0200 | Buy Now |
DISTI #
IRF840SPBF
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Avnet Americas | Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: IRF840SPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$0.8714 / $1.1070 | Buy Now |
DISTI #
IRF840SPBF
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TME | Transistor: N-MOSFET, unipolar, 500V, 5.1A, Idm: 32A, 125W Min Qty: 1 | 726 |
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$0.7300 / $1.0600 | Buy Now |
DISTI #
IRF840SPBF
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Avnet Americas | Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: IRF840SPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$0.8714 / $1.1070 | Buy Now |
DISTI #
IRF840SPBF
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EBV Elektronik | Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK (Alt: IRF840SPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 1 Weeks, 6 Days | EBV - 0 |
|
Buy Now |
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IRF840SPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF840SPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 510 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.85 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF840SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF840STRRPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF840SPBF vs IRF840STRRPBF |
IRF840S | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF840SPBF vs IRF840S |
IRF840SPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF840SPBF vs IRF840SPBF |
IRF840S | TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | IRF840SPBF vs IRF840S |
IRF840S | 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF840SPBF vs IRF840S |
IRF840S | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | IRF840SPBF vs IRF840S |
IRF840STRR | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF840SPBF vs IRF840STRR |
IRF840STRLPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Vishay Intertechnologies | IRF840SPBF vs IRF840STRLPBF |
IRF840S | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Intertechnologies | IRF840SPBF vs IRF840S |
IRF840S | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF840SPBF vs IRF840S |