Part Details for IRF840HPBF by Vishay Intertechnologies
Overview of IRF840HPBF by Vishay Intertechnologies
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- Number of Functional Equivalents:
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Price & Stock for IRF840HPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
61AK9677
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Newark | Mosfet, N-Ch, 500V, 7.3A, To-220Ab Rohs Compliant: Yes |Vishay IRF840HPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1901 |
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$1.0700 / $1.7600 | Buy Now |
DISTI #
78-IRF840HPBF
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Mouser Electronics | MOSFET Power MOSFET, 850mO 10V RoHS: Compliant | 1846 |
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$0.5690 / $1.5100 | Buy Now |
DISTI #
4077833
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element14 Asia-Pacific | MOSFET, N-CH, 500V, 7.3A, TO-220AB RoHS: Compliant Min Qty: 1 Container: Each | 1901 |
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$0.6568 / $1.6513 | Buy Now |
DISTI #
4077833
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Farnell | MOSFET, N-CH, 500V, 7.3A, TO-220AB RoHS: Compliant Min Qty: 1 Lead time: 15 Weeks, 1 Days Container: Each | 1901 |
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$0.6544 / $1.7483 | Buy Now |
Part Details for IRF840HPBF
IRF840HPBF CAD Models
IRF840HPBF Part Data Attributes
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IRF840HPBF
Vishay Intertechnologies
Buy Now
Datasheet
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IRF840HPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 7.3A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | unknown | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 175 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 7.3 A | |
Drain-source On Resistance-Max | 0.85 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 14 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 17 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 80 ns | |
Turn-on Time-Max (ton) | 90 ns |