Datasheets
IRF840BPBF-BE3 by:

Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Part Details for IRF840BPBF-BE3 by Vishay Intertechnologies

Overview of IRF840BPBF-BE3 by Vishay Intertechnologies

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Price & Stock for IRF840BPBF-BE3

Part # Distributor Description Stock Price Buy
DISTI # 06AJ9165
Newark N-Channel 500V |Vishay IRF840BPBF-BE3 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $0.6200
  • 2,500 $0.5710
$0.5710 / $0.6200 Buy Now
DISTI # IRF840BPBF-BE3
Avnet Americas Transistor MOSFET N-Channel 500V 8.7A 3-Pin TO-220AB - Tape and Reel (Alt: IRF840BPBF-BE3) Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 78-IRF840BPBF-BE3
Mouser Electronics MOSFET 500V N-CH HEXFET RoHS: Compliant 6761
  • 1 $1.3500
  • 10 $1.0800
  • 100 $0.8480
  • 500 $0.7280
  • 1,000 $0.5700
  • 5,000 $0.5430
  • 10,000 $0.5070
$0.5070 / $1.3500 Buy Now
Future Electronics N-Channel 500 V 8.7A (Tc) 156W (Tc) Through Hole TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
Tube
  • 1,000 $0.5500
  • 2,000 $0.5400
  • 3,000 $0.5300
  • 4,000 $0.5250
  • 5,000 $0.5100
$0.5100 / $0.5500 Buy Now
DISTI # IRF840BPBF-BE3
TTI MOSFET 500V N-CH HEXFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 9300
In Stock
  • 50 $1.0500
  • 100 $0.8300
  • 500 $0.7000
  • 1,000 $0.5600
  • 2,000 $0.5400
  • 5,000 $0.5200
  • 10,000 $0.5100
$0.5100 / $1.0500 Buy Now
DISTI # IRF840BPBF-BE3
Avnet Americas Transistor MOSFET N-Channel 500V 8.7A 3-Pin TO-220AB - Tape and Reel (Alt: IRF840BPBF-BE3) Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # IRF840BPBF-BE3
Avnet Americas Transistor MOSFET N-Channel 500V 8.7A 3-Pin TO-220AB - Tape and Reel (Alt: IRF840BPBF-BE3) Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel 0
RFQ

Part Details for IRF840BPBF-BE3

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IRF840BPBF-BE3 Part Data Attributes

IRF840BPBF-BE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF840BPBF-BE3 Vishay Intertechnologies Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
Factory Lead Time 18 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 56 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8.7 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 8 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 156 W
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 56 ns
Turn-on Time-Max (ton) 58 ns

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