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Transistors / Power Field-Effect Transistors / IRF840ASPBF
Datasheets
IRF840ASPBF by:

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3

Part Details for IRF840ASPBF by Vishay Intertechnologies

Overview of IRF840ASPBF by Vishay Intertechnologies

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Price & Stock for IRF840ASPBF

Part # Distributor Description Stock Price Buy
DISTI # 844-IRF840ASPBF
Mouser Electronics MOSFET 500V N-CH HEXFET D2-PA RoHS: Compliant 10755
  • 1 $1.9400
  • 10 $1.4900
  • 100 $1.4000
  • 500 $1.3800
  • 1,000 $1.3200
$1.3200 / $1.9400 Buy Now
Future Electronics Single N-Channel 500 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 700
Tube
  • 1 $1.1300
  • 40 $1.0800
  • 150 $1.0300
  • 500 $0.9850
  • 2,000 $0.9000
$0.9000 / $1.1300 Buy Now
Future Electronics Single N-Channel 500 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 1 $1.1300
  • 40 $1.0800
  • 150 $1.0300
  • 500 $0.9850
  • 2,000 $0.9000
$0.9000 / $1.1300 Buy Now
DISTI # IRF840ASPBF
TTI MOSFET 500V N-CH HEXFET D2-PA RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 1000
In Stock
  • 50 $1.1800
  • 100 $1.1600
  • 150 $1.1400
  • 500 $1.1100
  • 1,000 $1.0900
  • 2,000 $1.0700
  • 5,000 $1.0500
$1.0500 / $1.1800 Buy Now
DISTI # IRF840ASPBF
Avnet Americas Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK - Bulk (Alt: IRF840ASPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Bulk 0
  • 1,000 $1.9191
  • 2,000 $1.3109
  • 4,000 $1.2675
  • 6,000 $1.7233
  • 8,000 $1.1766
  • 10,000 $1.1214
  • 100,000 $1.0661
$1.0661 / $1.9191 Buy Now
DISTI # IRF840ASPBF
TME Transistor: N-MOSFET, unipolar, 500V, 5.1A, Idm: 32A, 125W Min Qty: 1 931
  • 1 $1.3100
  • 3 $1.1800
  • 10 $1.0400
  • 50 $0.9300
  • 250 $0.8700
$0.8700 / $1.3100 Buy Now
DISTI # IRF840ASPBF
Avnet Americas Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK - Bulk (Alt: IRF840ASPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Bulk 0
  • 1,000 $1.9191
  • 2,000 $1.3109
  • 4,000 $1.2675
  • 6,000 $1.7233
  • 8,000 $1.1766
  • 10,000 $1.1214
  • 100,000 $1.0661
$1.0661 / $1.9191 Buy Now
DISTI # SMC-IRF840ASPBF
Sensible Micro Corporation Transistor: N-Mosfet, Unipolar, 500V, 5.1A, Idm: 32A, 125W RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 1005 Container: Tubes 13
  • 100 $0.8815
  • 500 $0.8405
  • 1,000 $0.8192
$0.8192 / $0.8815 RFQ
DISTI # IRF840ASPBF
EBV Elektronik Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK (Alt: IRF840ASPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now

Part Details for IRF840ASPBF

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IRF840ASPBF Part Data Attributes

Parametric Data
IRF840ASPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF840ASPBF Vishay Intertechnologies Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 510 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF840ASPBF

This table gives cross-reference parts and alternative options found for IRF840ASPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840ASPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF840ASTRRPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRF840ASPBF vs IRF840ASTRRPBF
IRF840ASTRRPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3 Vishay Intertechnologies IRF840ASPBF vs IRF840ASTRRPBF
IRF840ASTRRPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF840ASPBF vs IRF840ASTRRPBF
SIHF840AS-GE3 TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRF840ASPBF vs SIHF840AS-GE3
IRF840ASTRLPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3 Vishay Intertechnologies IRF840ASPBF vs IRF840ASTRLPBF
IRF840AS Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRF840ASPBF vs IRF840AS
IRF840ASTRLPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF840ASPBF vs IRF840ASTRLPBF
IRF840ASTRR Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRF840ASPBF vs IRF840ASTRR
IRF840ASPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF840ASPBF vs IRF840ASPBF
IRF840ASTRL Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRF840ASPBF vs IRF840ASTRL
Part Number Description Manufacturer Compare
IRF840ASTRRPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3 Vishay Intertechnologies IRF840ASPBF vs IRF840ASTRRPBF
SIHF840ASTR TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRF840ASPBF vs SIHF840ASTR
IRF840ASTRLPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3 Vishay Intertechnologies IRF840ASPBF vs IRF840ASTRLPBF
SIHF840AS-GE3 TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRF840ASPBF vs SIHF840AS-GE3

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