-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
38K2859
|
Newark | Mosfet Transistor, N Channel, 8 A, 500 V, 850 Mohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRF840APBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 3226 |
|
$0.9480 / $1.7100 | Buy Now |
DISTI #
IRF840APBF
|
Avnet Americas | Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRF840APBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
|
$0.8215 / $1.0436 | Buy Now |
DISTI #
844-IRF840APBF
|
Mouser Electronics | MOSFET 500V N-CH HEXFET RoHS: Compliant | 2479 |
|
$0.6980 / $1.6500 | Buy Now |
DISTI #
70078867
|
RS | MOSFET, Power, N-Ch, VDSS 500V, RDS(ON) 0.85Ohm, ID 8A, TO-220AB, PD 125W, VGS +/-30V | Vishay PCS IRF840APBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 950 |
|
$1.0700 | Buy Now |
|
Future Electronics | N-Channel 500 V 0.85 Ω 38 nC Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 12950Tube |
|
$0.7000 / $0.8350 | Buy Now |
|
Future Electronics | N-Channel 500 V 0.85 Ω 38 nC Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 1950Tube |
|
$0.7000 / $0.8350 | Buy Now |
|
Future Electronics | N-Channel 500 V 0.85 Ω 38 nC Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 1000Tube |
|
$0.7000 / $0.8350 | Buy Now |
|
Future Electronics | N-Channel 500 V 0.85 Ω 38 nC Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
|
$0.7000 / $0.8350 | Buy Now |
DISTI #
IRF840APBF
|
TTI | MOSFET 500V N-CH HEXFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 1000 In Stock |
|
$0.7800 / $0.9400 | Buy Now |
DISTI #
IRF840APBF
|
Avnet Americas | Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRF840APBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
|
$0.8215 / $1.0436 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRF840APBF
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
IRF840APBF
Vishay Intertechnologies
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-220AB | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 510 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.85 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 8 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF840APBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840APBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF840A | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Vishay Intertechnologies | IRF840APBF vs IRF840A |
IRF840APBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | IRF840APBF vs IRF840APBF |
IRF840A | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Siliconix | IRF840APBF vs IRF840A |
IRF840A | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fairchild Semiconductor Corporation | IRF840APBF vs IRF840A |
IRF840A | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF840APBF vs IRF840A |
IRF840A | 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF840APBF vs IRF840A |