Part Details for IRF833 by Micro Electronics Corporation
Overview of IRF833 by Micro Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF833
IRF833 CAD Models
IRF833 Part Data Attributes
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IRF833
Micro Electronics Corporation
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Datasheet
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IRF833
Micro Electronics Corporation
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Rohs Code | No | |
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | MICRO ELECTRONICS LTD | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 4 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 75 W | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for IRF833
This table gives cross-reference parts and alternative options found for IRF833. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF833, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF833 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FCI Semiconductor | IRF833 vs IRF833 |
BUK455-500B | TRANSISTOR 5.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IRF833 vs BUK455-500B |
BUZ41A | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4.5A I(D),TO-220AB | Intersil Corporation | IRF833 vs BUZ41A |
IRF833 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Micro Electronics Ltd | IRF833 vs IRF833 |
BUZ42 | 4A, 500V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | IRF833 vs BUZ42 |
IRF833 | 4A, 450V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF833 vs IRF833 |
BUZ42 | Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220AB | New Jersey Semiconductor Products Inc | IRF833 vs BUZ42 |
IRF833 | 4A, 450V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF833 vs IRF833 |
SSP6N55 | Power Field-Effect Transistor, 6A I(D), 550V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF833 vs SSP6N55 |
BUZ41A | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | IRF833 vs BUZ41A |