There are no models available for this part yet.
Overview of IRF833 by Micro Electronics Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRF833 by Micro Electronics Corporation
Part Data Attributes for IRF833 by Micro Electronics Corporation
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|---|---|
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Rohs Code
|
No
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Part Life Cycle Code
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Contact Manufacturer
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Ihs Manufacturer
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MICRO ELECTRONICS LTD
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Package Description
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,
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Configuration
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SINGLE
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Drain Current-Max (ID)
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4 A
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JESD-609 Code
|
e0
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Number of Elements
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1
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
|
75 W
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Surface Mount
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NO
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Terminal Finish
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Tin/Lead (Sn/Pb)
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Alternate Parts for IRF833
This table gives cross-reference parts and alternative options found for IRF833. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF833, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF833 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Micro Electronics Ltd | IRF833 vs IRF833 |
| IRF833 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Thomson Consumer Electronics | IRF833 vs IRF833 |
| IRF833 | TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,4A I(D),TO-220AB | Texas Instruments | IRF833 vs IRF833 |
| BUK455-500B | TRANSISTOR 5.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IRF833 vs BUK455-500B |
| IRF833 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FCI Semiconductor | IRF833 vs IRF833 |
| BUZ41A | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | IRF833 vs BUZ41A |
| YTA830 | TRANSISTOR 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | Toshiba America Electronic Components | IRF833 vs YTA830 |
| BUZ41A | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4.5A I(D),TO-220AB | Intersil Corporation | IRF833 vs BUZ41A |
| BUZ42 | Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF833 vs BUZ42 |
| MTP4N50 | Power Field-Effect Transistor, 4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF833 vs MTP4N50 |