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Transistors / Power Field-Effect Transistors / IRF830AS
Datasheets
IRF830AS by:

Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK

Part Details for IRF830AS by New Jersey Semiconductor Products Inc

Overview of IRF830AS by New Jersey Semiconductor Products Inc

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for IRF830AS

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IRF830AS Part Data Attributes

Parametric Data
IRF830AS New Jersey Semiconductor Products Inc
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IRF830AS New Jersey Semiconductor Products Inc Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 5 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL
Transistor Element Material SILICON

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