Datasheets
IRF830A by:
International Rectifier
Fairchild Semiconductor Corporation
International Rectifier
Motorola Mobility LLC
Motorola Semiconductor Products
New Jersey Semiconductor Products Inc
Samsung Semiconductor
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for IRF830A by International Rectifier

Results Overview of IRF830A by International Rectifier

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IRF830A Information

IRF830A by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF830A

Part # Distributor Description Stock Price Buy
Bristol Electronics   26
RFQ
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4.5A I(D),TO-220AB 30
  • 1 $8.0727
  • 5 $5.9200
  • 14 $5.3818
$5.3818 / $8.0727 Buy Now

Part Details for IRF830A

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IRF830A Part Data Attributes

IRF830A International Rectifier
Buy Now Datasheet
Compare Parts:
IRF830A International Rectifier Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description TO-220AB, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 230 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 73 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF830A

This table gives cross-reference parts and alternative options found for IRF830A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF830A Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF830A vs IRF830A
Part Number Manufacturer Composite Price Description Compare
IRF830A Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF830A vs IRF830A
IRF830A Samsung Semiconductor Check for Price Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF830A vs IRF830A
IRF830A Motorola Mobility LLC Check for Price 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF830A vs IRF830A
IRF830APBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN IRF830A vs IRF830APBF

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