Part Details for IRF8308MTRPBF by International Rectifier
Overview of IRF8308MTRPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF8308MTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRF8308MTRPBF-ND
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DigiKey | TRENCH MOSFET - DIRECTFET MV Min Qty: 263 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
10644 In Stock |
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$1.1400 | Buy Now |
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Rochester Electronics | IRF8308 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 10644 |
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$0.9818 / $1.1600 | Buy Now |
Part Details for IRF8308MTRPBF
IRF8308MTRPBF CAD Models
IRF8308MTRPBF Part Data Attributes
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IRF8308MTRPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF8308MTRPBF
International Rectifier
Power Field-Effect Transistor, 27A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MX, CAN, ISOMETRIC-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | ROHS COMPLIANT, MX, CAN, ISOMETRIC-3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 12 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 27 A | |
| Drain-source On Resistance-Max | 0.0035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 89 W | |
| Pulsed Drain Current-Max (IDM) | 212 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |