Part Details for IRF830 by Philips Semiconductors
Overview of IRF830 by Philips Semiconductors
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- Part Data Attributes: (Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for IRF830
IRF830 CAD Models
IRF830 Part Data Attributes:
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IRF830
Philips Semiconductors
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Datasheet
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IRF830
Philips Semiconductors
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | PHILIPS SEMICONDUCTORS | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 4.5 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 75 W | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) |