Part Details for IRF8113TRPBF by Infineon Technologies AG
Overview of IRF8113TRPBF by Infineon Technologies AG
- Distributor Offerings: (19 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF8113TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
31K2303
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Newark | Mosfet Ic, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:17.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:-, Power Dissipation:- Rohs Compliant: Yes |Infineon IRF8113TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.4740 / $0.9050 | Buy Now |
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DISTI #
IRF8113PBFCT-ND
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DigiKey | MOSFET N-CH 30V 17.2A 8SO Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3998 In Stock |
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$0.2981 / $1.2900 | Buy Now |
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DISTI #
IRF8113TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF8113TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.2366 / $0.2484 | Buy Now |
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DISTI #
942-IRF8113TRPBF
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Mouser Electronics | MOSFETs MOSFT 30V 16.6A 6mOhm 24nC RoHS: Compliant | 3696 |
|
$0.2980 / $0.8600 | Buy Now |
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DISTI #
E02:0323_00176347
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Arrow Electronics | Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Date Code: 2345 | Europe - 28000 |
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$0.2821 / $0.2877 | Buy Now |
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DISTI #
V72:2272_13890572
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Arrow Electronics | Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2311 Container: Cut Strips | Americas - 300 |
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$0.2974 / $0.8583 | Buy Now |
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Future Electronics | Single N-Channel 30 V 6.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Container: Reel | 0Reel |
|
$0.2850 / $0.3000 | Buy Now |
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Future Electronics | Single N-Channel 30 V 6.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Container: Reel | 0Reel |
|
$0.2850 / $0.3000 | Buy Now |
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DISTI #
84388566
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Verical | Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Date Code: 2345 | Americas - 28000 |
|
$0.2877 / $0.2935 | Buy Now |
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DISTI #
75723448
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Verical | Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 94 Package Multiple: 1 Date Code: 2341 | Americas - 3900 |
|
$0.3250 / $0.3338 | Buy Now |
Part Details for IRF8113TRPBF
IRF8113TRPBF CAD Models
IRF8113TRPBF Part Data Attributes
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IRF8113TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF8113TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 17.2 A | |
| Drain-source On Resistance-Max | 0.0056 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 250 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |