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Transistors / Power Field-Effect Transistors / IRF8010PBF
Datasheets
IRF8010PBF by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRF8010PBF by International Rectifier

Results Overview of IRF8010PBF by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRF8010PBF Information

IRF8010PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF8010PBF

Part # Distributor Description Stock Price Buy
Rochester Electronics IRF8010 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 90
  • 1 $0.9588
  • 25 $0.9396
  • 100 $0.9013
  • 500 $0.8629
  • 1,000 $0.8150
$0.8150 / $0.9588 Buy Now
Vyrian Transistors 1366
RFQ

Part Details for IRF8010PBF

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IRF8010PBF Part Data Attributes

Parametric Data
IRF8010PBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF8010PBF International Rectifier Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description LEAD FREE PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 310 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 260 W
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF8010PBF

This table gives cross-reference parts and alternative options found for IRF8010PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF8010PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF8010 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF8010PBF vs IRF8010
IRF8010 International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF8010PBF vs IRF8010
IRF8010PBF Infineon Technologies AG $1.1065 Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRF8010PBF vs IRF8010PBF
IXFX80N10Q IXYS Corporation Check for Price Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN IRF8010PBF vs IXFX80N10Q
IRFSL4610TRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN IRF8010PBF vs IRFSL4610TRRPBF
IRF8010HR International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF8010PBF vs IRF8010HR
IRF8010L International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN IRF8010PBF vs IRF8010L
IRFSL4610TRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN IRF8010PBF vs IRFSL4610TRLPBF
IRFSL4610TRR International Rectifier Check for Price Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN IRF8010PBF vs IRFSL4610TRR
IRFSL4610TRR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN IRF8010PBF vs IRFSL4610TRR

IRF8010PBF Related Parts

IRF8010PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF8010PBF is -55°C to 175°C.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.

  • The maximum voltage rating for the IRF8010PBF is 100V.

  • Use a voltage regulator or a voltage clamp to prevent overvoltage. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current and shut down the device if necessary.

  • Yes, the IRF8010PBF is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly cooled and the switching frequency is within the recommended range.