Part Details for IRF7842PBF by International Rectifier
Overview of IRF7842PBF by International Rectifier
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
Price & Stock for IRF7842PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 12 |
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Bristol Electronics | 1035 |
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Quest Components | MOSFET Transistor, N-Channel, SO | 800 |
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$0.9800 / $2.4500 | Buy Now |
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ComSIT USA | HEXFET Power MOSFET Small Signal Field-Effect Transistor, 18A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant | Europe - 130 |
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Chip 1 Exchange | INSTOCK | 139 |
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Part Details for IRF7842PBF
IRF7842PBF CAD Models
IRF7842PBF Part Data Attributes:
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IRF7842PBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF7842PBF
International Rectifier
Small Signal Field-Effect Transistor, 18A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOIC | |
| Package Description | LEAD FREE, SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.005 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 310 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7842PBF
This table gives cross-reference parts and alternative options found for IRF7842PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7842PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7821TR | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | International Rectifier | IRF7842PBF vs IRF7821TR |
| 2SK2557 | Power Field-Effect Transistor, 7A I(D), 30V, 0.06ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET | SANYO Electric Co Ltd | IRF7842PBF vs 2SK2557 |
| F8H3N | Power Field-Effect Transistor, 8A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Shindengen Electronic Manufacturing Co Ltd | IRF7842PBF vs F8H3N |
| IRF7413PBF-1 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | International Rectifier | IRF7842PBF vs IRF7413PBF-1 |
| IRF7460PBF | Power Field-Effect Transistor, 12A I(D), 20V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7842PBF vs IRF7460PBF |
| IRF7413ZGPBF | Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | International Rectifier | IRF7842PBF vs IRF7413ZGPBF |
| TPC8006-H | TRANSISTOR 7 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-6J1B, 8 PIN, FET General Purpose Power | Toshiba America Electronic Components | IRF7842PBF vs TPC8006-H |
| IRF7413TRPBF | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7842PBF vs IRF7413TRPBF |
| FSS202 | Power Field-Effect Transistor, 7A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | SANYO Electric Co Ltd | IRF7842PBF vs FSS202 |
| SI4890DY-T1-E3 | TRANSISTOR 11 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power | Vishay Siliconix | IRF7842PBF vs SI4890DY-T1-E3 |