Part Details for IRF7832TR by Infineon Technologies AG
Overview of IRF7832TR by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7832TR
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Win Source Electronics | Synchronous MOSFET for Notebook Processor Power | MOSFET N-CH 30V 20A 8-SOIC | 269863 |
|
$0.4350 / $0.5620 | Buy Now |
Part Details for IRF7832TR
IRF7832TR CAD Models
IRF7832TR Part Data Attributes
|
|
IRF7832TR
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRF7832TR
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOP-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 260 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 2 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7832TR
This table gives cross-reference parts and alternative options found for IRF7832TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7832TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7832 | International Rectifier | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | IRF7832TR vs IRF7832 |
| IRF7832 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | IRF7832TR vs IRF7832 |
| IRF7832TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | IRF7832TR vs IRF7832TR |
| IRF7832PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7832TR vs IRF7832PBF |
| IRF7862TRPBF | Infineon Technologies AG | $0.8038 | Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET | IRF7832TR vs IRF7862TRPBF |
| IRF7862PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEADFREE, SO-8 | IRF7832TR vs IRF7862PBF |
| IRF7832TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | IRF7832TR vs IRF7832TRPBF |
| IRF7862PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEADFREE, SO-8 | IRF7832TR vs IRF7862PBF |
| NTMFS4935NT3G | onsemi | Check for Price | Single N-Channel Power MOSFET 30V, 93A, 3.2mΩ, DFN5 5X6, 1.27P (SO 8FL), 5000-REEL | IRF7832TR vs NTMFS4935NT3G |
| IRF7832PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7832TR vs IRF7832PBF |