Part Details for IRF7811AV by International Rectifier
Overview of IRF7811AV by International Rectifier
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7811AV
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 796 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, SO | 2247 |
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$0.3300 / $0.9000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 1518 |
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$0.5250 / $1.5000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 48 |
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$0.9000 / $1.5000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 636 |
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$0.8680 / $2.1700 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 352 |
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$0.6000 / $1.5000 | Buy Now |
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ComSIT USA | SMALL SIGNAL FIELD-EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 10.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Not Compliant | Europe - 59 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 86 |
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$3.2500 / $5.0000 | Buy Now |
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Win Source Electronics | N-Channel Application-Specific MOSFETs | 28350 |
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$7.5370 / $11.3050 | Buy Now |
Part Details for IRF7811AV
IRF7811AV CAD Models
IRF7811AV Part Data Attributes:
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IRF7811AV
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF7811AV
International Rectifier
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Part Package Code | SOIC | |
| Package Description | SOP-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 10.8 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |