There are no models available for this part yet.
Overview of IRF7809AVPBF by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 3 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 4 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for IRF7809AVPBF by International Rectifier
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant |
|
|
RFQ |
CAD Models for IRF7809AVPBF by International Rectifier
Part Data Attributes for IRF7809AVPBF by International Rectifier
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
INTERNATIONAL RECTIFIER CORP
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|
Part Package Code
|
SOIC
|
|
Package Description
|
LEAD FREE, SOP-8
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|
Pin Count
|
8
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
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|
Configuration
|
SINGLE WITH BUILT-IN DIODE
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|
DS Breakdown Voltage-Min
|
30 V
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Drain Current-Max (ID)
|
13.3 A
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Drain-source On Resistance-Max
|
0.009 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
|
MS-012AA
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JESD-30 Code
|
R-PDSO-G8
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|
JESD-609 Code
|
e3
|
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Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
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Number of Terminals
|
8
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|
Operating Mode
|
ENHANCEMENT MODE
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Operating Temperature-Max
|
150 °C
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|
Package Body Material
|
PLASTIC/EPOXY
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|
Package Shape
|
RECTANGULAR
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Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
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|
Power Dissipation-Max (Abs)
|
2.5 W
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|
Pulsed Drain Current-Max (IDM)
|
100 A
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|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
DUAL
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRF7809AVPBF
This table gives cross-reference parts and alternative options found for IRF7809AVPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7809AVPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7809AVPBF | Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | Infineon Technologies AG | IRF7809AVPBF vs IRF7809AVPBF |
| IRF7809AVTRPBF | Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | International Rectifier | IRF7809AVPBF vs IRF7809AVTRPBF |
| IRF7809AVTR | Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | International Rectifier | IRF7809AVPBF vs IRF7809AVTR |
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