Datasheets
IRF7807D1TR by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

Part Details for IRF7807D1TR by International Rectifier

Results Overview of IRF7807D1TR by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRF7807D1TR Information

IRF7807D1TR by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF7807D1TR

Part # Distributor Description Stock Price Buy
Bristol Electronics   3980
RFQ
Quest Components   3184
  • 1 $2.9232
  • 633 $0.9135
  • 1,096 $0.8039
$0.8039 / $2.9232 Buy Now
Quest Components   1600
  • 1 $2.4360
  • 759 $0.7613
  • 1,315 $0.6699
$0.6699 / $2.4360 Buy Now

Part Details for IRF7807D1TR

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IRF7807D1TR Part Data Attributes

IRF7807D1TR International Rectifier
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IRF7807D1TR International Rectifier Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code SOIC
Package Description SO-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 8.3 A
Drain-source On Resistance-Max 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 66 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7807D1TR

This table gives cross-reference parts and alternative options found for IRF7807D1TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7807D1TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF7807D1PBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, IRF7807D1TR vs IRF7807D1PBF
Part Number Manufacturer Composite Price Description Compare
IRF7807D1PBF International Rectifier Check for Price Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 IRF7807D1TR vs IRF7807D1PBF
IRF7807D1TRPBF International Rectifier Check for Price 8.3A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, SO-8 IRF7807D1TR vs IRF7807D1TRPBF
IRF7807D1TRHR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7807D1TR vs IRF7807D1TRHR
IRF7807D2HR International Rectifier Check for Price Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7807D1TR vs IRF7807D2HR
IRF7807D2PBF International Rectifier Check for Price Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 IRF7807D1TR vs IRF7807D2PBF
IRF7807D1-TR International Rectifier Check for Price Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 IRF7807D1TR vs IRF7807D1-TR
FDS8884 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 8.5A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 IRF7807D1TR vs FDS8884
RJK0369DSP-00-J0 Renesas Electronics Corporation Check for Price 9A, 30V, 0.0225ohm, N-CHANNEL, Si, POWER, MOSFET, 4.90 X 3.95 MM, 1.27 MM PITCH, LEAD FREE, PLASTIC, SOP-8 IRF7807D1TR vs RJK0369DSP-00-J0
IRF7807D2TRPBF International Rectifier Check for Price Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 IRF7807D1TR vs IRF7807D2TRPBF