Transistors
IRF7807D1TR
Description: Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

Overview of IRF7807D1TR by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF7807D1TR by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   3980
RFQ
Quest Components   1600
  • 1 $2.4360
  • 759 $0.7613
  • 1,315 $0.6699
$0.6699 / $2.4360 Buy Now
Quest Components   3184
  • 1 $2.9232
  • 633 $0.9135
  • 1,096 $0.8039
$0.8039 / $2.9232 Buy Now

CAD Models for IRF7807D1TR by International Rectifier
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Part Data Attributes for IRF7807D1TR by International Rectifier

IRF7807D1TR
International Rectifier
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Part Package Code
SOIC
Package Description
SO-8
Pin Count
8
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
8.3 A
Drain-source On Resistance-Max
0.025 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
66 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRF7807D1TR
    International Rectifier
    Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
    VS

Alternate Parts for IRF7807D1TR

This table gives cross-reference parts and alternative options found for IRF7807D1TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7807D1TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF7807D1TRHR Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7807D1TR vs IRF7807D1TRHR
IRF7807D1PBF Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7807D1TR vs IRF7807D1PBF
IRF7807D1TRPBF 8.3A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, SO-8 International Rectifier IRF7807D1TR vs IRF7807D1TRPBF
IRF7807D1 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7807D1TR vs IRF7807D1
Part Number Description Manufacturer Compare
FDS8884 8.5A, 30V, 0.023ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8 Rochester Electronics LLC IRF7807D1TR vs FDS8884
IRF7807D2TR Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7807D1TR vs IRF7807D2TR
IRF7807D1TRHR Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7807D1TR vs IRF7807D1TRHR

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