Part Details for IRF7769L2TRPBF by Infineon Technologies AG
Overview of IRF7769L2TRPBF by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7769L2TRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9206
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Newark | Mosfet, N-Ch, 100V, 375A, Directfet L8, Transistor Polarity:N Channel, Continuous Drain Current Id:124A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0028Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.7V, Power Rohs Compliant: Yes |Infineon IRF7769L2TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
DISTI #
IRF7769L2TRPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 124A, 125W, DirectFET Min Qty: 4000 | 0 |
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$2.7300 | RFQ |
Part Details for IRF7769L2TRPBF
IRF7769L2TRPBF CAD Models
IRF7769L2TRPBF Part Data Attributes:
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IRF7769L2TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7769L2TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 260 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.0035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XBCC-N9 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 9 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 500 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF7769L2TRPBF
This table gives cross-reference parts and alternative options found for IRF7769L2TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7769L2TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF7769L2TRPBF | Power Field-Effect Transistor, 20A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 | International Rectifier | IRF7769L2TRPBF vs IRF7769L2TRPBF |
IRF7769L2TR1PBF | Power Field-Effect Transistor, 20A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 | International Rectifier | IRF7769L2TRPBF vs IRF7769L2TR1PBF |